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The Solid/Liquid Interface

  • Chapter
The Chemical Physics of Surfaces

Abstract

Studies at the solid/liquid interface have proved particularly valuable in improving our knowledge of the chemical physics of surfaces,(1) particularly when the rigid band model is appropriate. In such studies it is found possible to (a) determine the doping level, the band gap, the type (n or p), the minority carrier diffusion length,(2) and the behavior of flaws such as dislocations near the semiconductor surface, (b) determine the relative positions of band edges for various semiconductors, (c) determine the energy levels associated with well-behaved surface species relative to these band edges, and (d) relate these energy levels to the chemical properties (particularly the redox potential) of the foreign species.

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Authors and Affiliations

  1. Simon Fraser University, Burnaby, British Columbia, Canada

    S. Roy Morrison

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  1. S. Roy Morrison
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Morrison, S.R. (1990). The Solid/Liquid Interface. In: The Chemical Physics of Surfaces. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2498-8_8

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  • DOI: https://doi.org/10.1007/978-1-4899-2498-8_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-2500-8

  • Online ISBN: 978-1-4899-2498-8

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