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Highlights of the Round Table Discussion on High Pressure and Semiconductors

  • B. A. Weinstein
Part of the NATO ASI Series book series (NSSB, volume 286)

Abstract

Each of the panel members offered a five minute overview of the state and future directions of the field, followed by questions and comments from the audience. In the summary presented here, I have tried to accurately paraphrase (not quote) both the content and spirit of these remarks based on notes, memory, and a tape recording. I apologize for any inadvertent omissions or inclusions. (B. A. Weinstein).

Keywords

Device Property Band Align Round Table Discussion Fractional Quantum Hall Effect Quantum Hall System 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • B. A. Weinstein
    • 1
  1. 1.Physics DepartmentState University of New YorkBuffaloUSA

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