Abstract
Compositionally modulated semiconductor structures were first proposed by Esaki and Tsu(1) in order to fabricate electronic oscillators. The material system that they proposed was alternate layers of GaAs and Al x Ga1−x As in order to achieve a modulation in the band edges and to create confined states in the GaAs layers, which in this case acted as potential wells. One of the main advantages of constructing layered structures from these two materials was that GaAs and AlAs have a very similar lattice constant and this means that the two materials can be grown together in layered structure without generating any significant strains due to the lattice mismatch. Molecular Beam Epitaxy (MBE) has been the dominant technique used to fabricate layered semiconductor systems since its invention by Cho and Arthur over 20 years ago.(2) In recent years there has been a lot of theoretical and experimental work performed on low-dimensional semiconductor systems and on the techniques used in fabricating them, and the present volume probably provides a good introduction to the whole area.
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White, J.D., Fasol, G. (1993). Phonons in Low-Dimensional Systems. In: Butcher, P., March, N.H., Tosi, M.P. (eds) Physics of Low-Dimensional Semiconductor Structures. Physics of Solids and Liquids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2415-5_2
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