Abstract
Detailed experimental and theoretical treatments of the Gunn diode, whose operation depends on the transferred electron, or Gunn-Hilsum effect, have been presented by many authors (see, e.g., Shaw et al., 1979). Most of these have centered on sample and device lengths greater than 10 μm. Because recent emphasis has been placed on structures that have near-micrometer or sub-micrometer lateral dimensions (Wu et al., 1991), we will focus on them in this chapter.
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© 1992 Springer Science+Business Media New York
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Shaw, M.P., Mitin, V.V., Schöll, E., Grubin, H.L. (1992). The Gunn Diode. In: Shaw, M.P., Mitin, V.V., Schöll, E., Grubin, H.L. (eds) The Physics of Instabilities in Solid State Electron Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2344-8_5
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DOI: https://doi.org/10.1007/978-1-4899-2344-8_5
Publisher Name: Springer, Boston, MA
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