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Characterization of Semiconductors by Mössbauer Spectroscopy

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Book cover Mössbauer Spectroscopy Applied to Inorganic Chemistry

Part of the book series: Modern Inorganic Chemistry ((MICE,volume 3))

Abstract

In 1962, shortly after the discovery of the Mössbauer effect in 1958, two papers were published1,2 on the characterization of impurity atoms in semiconductors by Mössbauer spectroscopy. Both dealt with 57Fe in silicon and germanium. In the 25 years that have passed since, more than 500 Mössbauer papers have been published on semiconductors. In Mössbauer spectroscopy experiments, the nucleus of the Mössbauer isotope acts as an extremely sensitive microscopic probe inside the semiconductor. From the study of the radiation emitted or absorbed without recoil by this nucleus, the symmetry and density of the surrounding electron configuration and the vibrational properties of the solid in which it is imbedded can be obtained.

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  1. Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3030, Leuven, Belgium

    Guido Langouche

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  1. Department of Chemistry, University of Missouri—Rolla, Rolla, Missouri, 65401, USA

    Gary J. Long

  2. Institut de Physique, Université de Liège, B-4000, Sart-Tilman, Belgium

    Fernande Grandjean

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Langouche, G. (1989). Characterization of Semiconductors by Mössbauer Spectroscopy. In: Long, G.J., Grandjean, F. (eds) Mössbauer Spectroscopy Applied to Inorganic Chemistry. Modern Inorganic Chemistry, vol 3. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2289-2_10

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