Abstract
Staebler and Wronski [1] observed that prolonged light exposure causes significant changes in the dark and photoconductivity of hydrogenated amorphous silicon alloys (a-Si:H). The effect was found to be reversible; annealing at temperatures above 150°C was found to restore the original values. Later work showed [2, 3] light-induced reversible changes in many other properties of the material. Changes were observed in (1) photo-luminescence, (2) density and energy distribution of gap states, (3) electron spin resonance, (4) sub-band gap absorption, (5) IR spectrum, (6) diffusion length, and (7) solar cell performance. Several models have also been put forward [4–6] to explain this phenomenon.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
D.L. Staebler and C.R. Wronski, Appl. Phys. Lett. 31, 292(1977).
D.E. Carlson, Solar Energy Mats. 8, 129(1982).
J.I. Pankove, Solar Energy Mats. 8, 141(1982).
S.R. Ovshinsky, J. Noncryst. Solids 32, 17(1979).
S.R. Elliot, Phil. Mag. 39, 349(1979).
D. Adler, J. de Phys. 42, 04–3(1981);
D. Adler, Solar Cells 9, 133 (1983).
I. Solomon, T. Dietl and D. Kaplan, J. de Phys. 39, 1241 (1978).
M.H. Tanielian, H. Fritzsche, C.C. Tsai and E. Symbalisty, Appl. Phys. Lett. 33, 353(1978).
S. Guha, K.L. Narasimhan and S.M. Pietruszko, J. Appl. Phys. 52, 859(1981).
B.A. Scott, J.A. Reimer, R.M. Plecenik, E.E. Simonyi and W. Reuter, Appl. Phys. Lett. 40, 973(1982).
D.I. Jones, R.A. Gibson, P.G. LeComber and W. E. Spear, Solar Energy Mats. 2, 93(1979).
Y. Mishima, Y. Ashida and M. Hirose, J. Noncryst. Solids 59–60, 707(1983).
B.Y. Tong, P.K. John, S.K. Wong and K.P. Chik, Appl. Phys. Lett. 38, 789(1981).
H. Fritzsche, Solar Energy Mats. 3, 447(1980).
C.R. Wronski and R.E. Daniel, Phys. Rev. B 23, 794(1981).
K. Morigaki, I. Hirabayashi, N. Nakayama, S. Nitta and K. Shimakawa, Solid State Commun. 33, 851(1980).
J.I. Pankove and J.E. Berkeyheiser, Appl. Phys. Lett. 37, 705(1980).
See, for example, S. Guha, Solar Energy Mats. 8, 269 (1982).
D.V. Lang, J.D. Cohen, J.P. Harbison and A.M. Sargent, Appl. Phys. Lett. 40, 474(1982).
D. Jousse, P. Viktorovitch, L. Vieux-Rochaz and A. Chenevas- Paule, J. Noncryst. Solids 35–36, 767(1980).
D. Jousse, R. Basset and S. Delionibus, Appl. Phys. Lett. 37, 208(1980).
J. Beichler and H. Mell, E. C. Photovoltaic Solar Energy Conference, Stressa, Italy, May 1982.
S. Guha, C.-Y. Huang and S.J. Hudgens, Phys. Rev. B 29, 5995(1984).
C.-Y. Huang, S. Guha and S.J. Hudgens, Phys. Rev. B 27, 7460(1983).
M.H. Tanielian, N.B. Goodman and H. Fritzsche, J. de Phys. 12, Suppl. 10, 04–375(1981).
J. Desner, B. Goldstein and D. Szostak, Appl. Phys. Lett. 18, 998(1980).
A. Skumanich, N.M. Amer and W.B. Jackson, Bull. A.P.S. 27, 146(1982).
D. Han and H. Fritzsche, J. Noncryst. Solids 59–60, 397(1983).
H. Dersch, J. Stuke and J. Beichler, Appl. Phys. Lett. 38, 456(1981).
S. Guha, C.-Y. Huang and S.J. Hudgens, Appl. Phys. Lett. 45, 50(1984).
R.S. Crandall and D.L. Staebler, Solar Cells 9, 63(1983).
S. Guha, J. Yang, W. Czubatyj, S.J. Hudgens and M. Hack, Appl. Phys. Lett. 42, 588(1983).
R.S. Crandall, Phys. Rev. B 24, 7457(1981).
D.E. Carlson, J. Vac. Soc. Tech. 20, 290(1982).
S.M. Pietruszko, K.L. Narasimhan and S. Guha, Phil. Mag. B 43, 357(1981).
A.E. Delahoy and R.W. Griffith, J. Appl. Phys. 52, 6337 (1981).
D.L. Staebler, R.S. Crandall and R. Williams, Appl. Phys. Lett. 39, 733(1981).
S. Guha, Appl. Phys. Lett, (in press).
R.A. Street, Appl. Phys. Lett. 42, 507(1983).
See, for example, Proc. of SERI Workshop on Light-Induced Effects in a-Si:H and its Effect on Solar Cell Stability, San Diego, 1982; Solar Cells 9, (1983).
Y. Uchida, M. Nishiura, H. Sakai and H. Haruki, Solar Cells 9, 3(1983).
S. Tsuda, N. Nakamura, K. Watanabe, T. Takahama, H. Nishiwaki, M. Ohnishi and Y. Kuwano, Solar Cells 9, 25(1983).
W. Kruhler, M. Moller, H. Pfleiderer, R. Plattner and B. Rauscher, EC Photovoltaic Solar Energy Conference, Stressa, Italy, (1982).
N.M. Amer, A. Skumanich and W.B Jackson, J. Noncryst. Solids 59–60, 409(1983).
Some recent experimental results [Nakamura et al., J. Noncryst. Solids 59–60, 1139 (1983)] indicate that hole trapping also causes metastable changes in the material. The effect, however, is small. It is possible that trapping of the holes weakens the bonds which then break up more easily in the presence of recombination.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1985 Springer Science+Business Media New York
About this chapter
Cite this chapter
Guha, S. (1985). Light-Induced Effects in Hydrogenated Amorphous Silicon Alloys. In: Adler, D., Schwartz, B.B., Steele, M.C. (eds) Physical Properties of Amorphous Materials. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2260-1_15
Download citation
DOI: https://doi.org/10.1007/978-1-4899-2260-1_15
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-2262-5
Online ISBN: 978-1-4899-2260-1
eBook Packages: Springer Book Archive