Polymer Field-Effect Transistors for Transport Property Studies

  • J. Paloheimo
  • E. Punkka
  • H. Stubb
  • P. Kuivalainen
Part of the NATO ASI Series book series (NSSB, volume 248)


Thin film field-effect transistors have been prepared of poly(3-alkyl-thiophenes) by using spin-coating techniques. The devices are used in the determination of the charge carrier mobility μ, dc conductivity σ, and the carrier concentration p0. Poly(3-hexylthiophene) is characterized in a wide temperature range T = 130–430 k, and possible transport mechanisms are discussed.


Charge Carrier Mobility Charge Carrier Concentration Accumulation Layer Room Temperature Mobility Negative Charge Carrier 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    J. Paloheimo, E. Punkka, P. Kuivalainen, H. Stubb, and P. Yli-Lahti, New dimensions for semiconductor devices: polymeric field-effect transistors, Acta Polytechnica Scandinaviea, El. Eng. Series 64:178 (1989).Google Scholar
  2. 2.
    H. Tomozawa, D. Braun, S. Phillips, and A. J. Heeger, Metal-polymer Schottky barriers on cast films of soluble poly(3-alkylthiophenes), Synth. Met., 22:63 (1987).CrossRefGoogle Scholar
  3. 3.
    S. M. Sze, “Physics of Semiconductor Devices”, John Wiley & Sons, 1969.Google Scholar
  4. 4.
    A. Tsumura, H. Koezuka and T. Ando, Polythiophene field-effect transistor: its characteristics and operation mechanism, Synth. Met., 25:11 (1989).CrossRefGoogle Scholar
  5. 5.
    N. Oyama, F. Yoshimura, T. Ohsaka, H. Koezuka, and T. Ando, Characteristics of a field-effect transistor fabricated with electropolymerized thin film, Jpn. J. Appl. Phys., 27:L448 (1988).ADSCrossRefGoogle Scholar
  6. 6.
    J. H. Burroughes, C. A. Jones, and R. H. Friend, New semiconductor device physics in polymer diodes and transistors, Nature, 335:137 (1988).ADSCrossRefGoogle Scholar
  7. 7.
    A. Assadi, C. Svensson, M. Willander and O. Inganäs, Field-effect mobility of poly(3-hexylthiophene), Appl. Phys. Lett., 53:195 (1988).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1990

Authors and Affiliations

  • J. Paloheimo
    • 1
  • E. Punkka
    • 1
  • H. Stubb
    • 1
  • P. Kuivalainen
    • 2
  1. 1.Semiconductor LaboratoryTechnical Research Centre of FinlandEspooFinland
  2. 2.Electron Physics LaboratoryHelsinki University of TechnologyEspooFinland

Personalised recommendations