Polymer Field-Effect Transistors for Transport Property Studies

  • J. Paloheimo
  • E. Punkka
  • H. Stubb
  • P. Kuivalainen
Part of the NATO ASI Series book series (NSSB, volume 248)

Abstract

Thin film field-effect transistors have been prepared of poly(3-alkyl-thiophenes) by using spin-coating techniques. The devices are used in the determination of the charge carrier mobility μ, dc conductivity σ, and the carrier concentration p0. Poly(3-hexylthiophene) is characterized in a wide temperature range T = 130–430 k, and possible transport mechanisms are discussed.

Keywords

Phene Chloroform Thiophene Estima Poly Thiophene 

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Copyright information

© Springer Science+Business Media New York 1990

Authors and Affiliations

  • J. Paloheimo
    • 1
  • E. Punkka
    • 1
  • H. Stubb
    • 1
  • P. Kuivalainen
    • 2
  1. 1.Semiconductor LaboratoryTechnical Research Centre of FinlandEspooFinland
  2. 2.Electron Physics LaboratoryHelsinki University of TechnologyEspooFinland

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