Abstract
The presence of hydrogen in amorphous silicon alloys affects both the defect structure and the instabilities. Specific examples where the presence of hydrogen is either directly or indirectly important include (1) the elimination of silicon dangling bonds, (2) the trapping of molecular hydrogen in voids and (3) the presence of optically-induced, reversible metastabilities in the optical and electronic properties.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
W.E. Carlos and P.C. Taylor, Molecular Hydrogen in a-Si: H, Phys. Rev. B25:1435 (1982).
J.E. Graebner, B. Golding and L.C. Allen, Solid Hydrogen in Hydrogenated Amorphous Silicon, Phys. Rev. Lett. 52:553 (1984); J.E. Graebner, L.C. Allen and B. Golding, Solid H2 in a-SI:H at Low Temperatures, Phys. Rev. B31:904 (1985).
H.V. Löhneysen, H.J. Schink and W. Beyer, Direct Experimental Evidence for Molecular Hydrogen in Amorphous Si: H, Phys. Rev. Lett. 52:549 (1984).
J.B. Boyce and M. Stutzmann, Orientational Ordering and Melting of Molecular H2 and in an a-Si Matrix: NMR Studies, Phys. Rev. Lett. 54:562 (1985).
P.A. Fedders, R. Fisch and R.E. Norberg, Dense H2 and Proton NMR in a-Si:H, Phys. Rev. B31:6887 (1985).
W.M. Pontuschka, W.E. Carlos and P.C. Taylor, Radiation-induced Paramagnetism in a-Si: H, Phys. Rev. B25:4362 (1982).
D.L. Staebler and C.R. Wronski, Reversible Conductivity Changes in Discharge-Produced Amorphous Si, Appl. Phys. Lett. 31:292 (1977).
D.K. Biegelsen, Electron Spin Resonance Studies of Amorphous Silicon, Proc. Electron Resonance Symp. 3:85 (1981).
D. Adler and and F.R. Shapiro, Effective Correlation Energy of the Dangling Bond in Amorphous Silicon, Physica 117B and 118B:932 (1983).
R.A. Street, D.K. Biegelsen and J.C. Knights, Defect States in Doped and Compensated a-Si: H, Phys. Rev. B24:969 (1981).
D. Adler, Electronic Properties of Amorphous Silicon Alloys, Kinam 4C: 225 (1982).
W.E. Carlos and P.C. Taylor, H NMR in a-Si, Phys. Rev. B26:3605 (1982).
M.S. Conradi and R.E. Norberg, Molecular H2: Nuclear Spin Relaxation Centers for Protons in a-Si: H, Phys. Rev. B24:2285 (1981).
E.D. VanderHeiden, W.D. Ohlsen and P.C. Taylor, NMR Studies of H2 in a-Si: H, Bull. Am. Phys. Soc. 30:354 (1985).
H. Dersch, J. Stuke and J. Beichler, Electron Spin Resonance of Doped Glow-Discharge Amorphous Silicon, Phys. Status Solidi B105:265 (1981); Temperature Dependence of ESR Spectra of Doped a-Si: H, Phys. Status Solidi B107:307 (1981).
C. Lee, W.D. Ohlsen and P.C. Taylor, Kinetics of the Metastable Optically Induced ESR in a-Si: H, Phys. Rev. B31:100 (1985).
M. Stutzmann, W.B. Jackson and C.C. Tsai, Light-Induced Metastable Defects in Hydrogenated Amorphous Silicon: A Systematic Study, Phys. Rev. B32:23 (1985).
C. Lee, W.D. Ohlsen, P.C. Taylor, H.S. Ullal and G.P. Ceasar, Dependence of the Metastable Optically-Induced ESR in a-Si: H on Temperature and Power, in AIP Conf. Proc. 120:205 (1984).
M. Stutzmann, W.B. Jackson and C.C. Tsai, The Kinetics of Formation and Annealing of Light Induced Defects in Hydrogenated Amorphous Silicon, in AIP Conf. Proc. 120:213 (1984).
D. Han and H. Fritzsche, Study of Light-Induced Creation of Defects in a-Si: H by Means of Single and Dual-Beam Photoconductivity, J. Non-Cryst. Solids 59+60:397 (1983).
S. Guha, C.-Y. Huang, S.J. Hudgens and J.S. Payson, Effects of Light Soaking at Different Temperatures on the Properties of Hydrogenated Amorphous Silicon Alloys, J. Non-Cryst. Solids 66:65 (1984).
R.A. Street, Luminescence in Amorphous Silicon, Adv. Phys. 30:593 (1981).
M. Gal, J.M. Viner, P.C. Taylor and R.D. Wieting, Existence of a Universal Low-Energy Tail in the Photoluminescence of a-Si1−xGex:H Alloys, Phys. Rev. B31:4060 (1985).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1986 Springer Science+Business Media New York
About this chapter
Cite this chapter
Taylor, P.C., Ohlsen, W.D., Lee, C., Vander Heiden, E.D. (1986). The Influence of Hydrogen on the Defects and Instabilities in Hydrogenated Amorphous Silicon. In: Bambakidis, G., Bowman, R.C. (eds) Hydrogen in Disordered and Amorphous Solids. NATO ASI Series, vol 136. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2025-6_9
Download citation
DOI: https://doi.org/10.1007/978-1-4899-2025-6_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-2027-0
Online ISBN: 978-1-4899-2025-6
eBook Packages: Springer Book Archive