Abstract
The main elements of the theory of amorphous semiconductors are reviewed. The kinds of disorder occurring in these materials are classified. The consequences of the various kinds of disorder for electronic states and energies at and near the band edges and in the gaps are discussed. The energy spectrum is divided into ranges according to the principal characteristics of the states and the spectrum, localized vs. extended, universal vs. nonuniversal, smooth vs. fractal, etc. The effects of interactions are discussed. The general theory of transport is reviewed. The consequences of the above for the optical and the transport properties are discussed briefly.
Substantially the same material will appear in Proceedings of the IMA Workshop on Random Media, Springer Verlag (in press).
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© 1986 Springer Science+Business Media New York
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Cohen, M.H. (1986). Elements of the Theory of Amorphous Semiconductors. In: Bambakidis, G., Bowman, R.C. (eds) Hydrogen in Disordered and Amorphous Solids. NATO ASI Series, vol 136. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2025-6_1
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DOI: https://doi.org/10.1007/978-1-4899-2025-6_1
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