Defect Structure and Generation Mechanisms at the Si/SiO2 Interface

  • J. H. Stathis


We first review recent work elucidating the oxide structure around the Pb center and illustrating important chemical differences among defects at the (100) interface. Then we present new results concerning the identification of defects generated by hot electrons in the gate oxide of devices. Using electrically-detected magnetic resonance to study interface degradation in MOSFETs, we observe the generation of Pb0 centers by hot-electron stress at fields above the electron heating threshold. In contrast, no Pb0 centers are created by electron-hole recombination near the interface, even though this process generates interface states.


Electron Paramagnetic Resonance Interface State Capture Cross Section Trap Hole Interface State Density 
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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • J. H. Stathis
    • 1
  1. 1.IBM Research DivisionT.J.Watson Research CenterYorktown HeightsUSA

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