Dependence of Surface Microroughness on Types of Silicon Substrates

  • T. Ohmi
  • T. Tsuga
  • J. Takano

Abstract

The dielectric breakdown field intensity is affected by the surface microroughness of silicon substrate. It has been found that the increase of surface microroughness due to the APM cleaning varies among the wafer types such as Cz, FZ and epitaxial(EPI). The surface microroughness is caused by the point defect such as vacancy cluster. In the case of the n type Cz wafer, the surface microroughness is increased even in the dilute HF cleaning, however this problem is perfectly resolved by inject H2O2 into the dilute HF.

Keywords

Surfactant H2O2 Phosphorus Fluoride Antimony 

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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • T. Ohmi
    • 1
  • T. Tsuga
    • 1
  • J. Takano
    • 1
  1. 1.Department of Electronic Engineering, Faculty of EngineeringTohoku UniversitySendai 980Japan

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