Abstract
In this paper we report a new spectroscopic ellipsometry technique that overcomes much of the ambiguity associated with measuring an interface under a film. For this technique we match the refractive index of the overlayer with an immersion liquid and then perform spectroscopic ellipsometry at several angles of incidence. Essentially, the overlayer is optically (not physically) removed, thereby rendering the ellipsometric measurement sensitive to the interfacial layer which is often known to be optically and chemically different than either substrate or film. The Si-SiO2 interface resulting from thermal oxidation of Si, and the evolution of the interface with annealing is studied using the new technique.
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© 1993 Springer Science+Business Media New York
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Irene, E.A., Yakovlev, V.A. (1993). A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO2 . In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1588-7_10
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DOI: https://doi.org/10.1007/978-1-4899-1588-7_10
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