Abstract
A GaAs MMIC Voltage Variable Attenuator (WA) has been developed for use at millimeter wave (MMW) frequencies incorporating triple-gate 0.25 μm power MESFET devices. This circuit exhibits exceptional power handling capabilities at all attenuation states, handling a minimum of 10 dBm input power, which occurs at it’s 3 dB attenuation state, and greater than 26 dBm while operating in it’s minimum attenuation state. The triple-gate WA measures 1.7 dB in the low attenuation state and greater than 32 dB in the high attenuation state at 30 GHz. Additional on-wafer small signal and large signal measurement data is presented and compared to a similar single-gate MESFET WA.
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References
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© 1997 Springer Science+Business Media New York
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Daly, M., Khanna, R., Bartle, D. (1997). A Triple-Gate MESFET Voltage Variable Attenuator for Miilimeter-Wave Applications. In: Das, N.K., Bertoni, H.L. (eds) Directions for the Next Generation of MMIC Devices and Systems. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1480-4_32
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DOI: https://doi.org/10.1007/978-1-4899-1480-4_32
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-1482-8
Online ISBN: 978-1-4899-1480-4
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