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On the Ions in an Argon-Hexamethyldisiloxane Radio-Frequency-Discharge

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Gaseous Dielectrics VII

Abstract

The RF generated anisothermal low pressure plasma is widely used in plasma technology for thin film deposition, etching and surface treatment. For plasma polymerization, the silicon organic compound hexamethyldisiloxane (CH3)3-Si-O-Si-(CH3)3 (HMDSO) plays an important role in the field of surface protection, optics, electronics and biomedicine1.

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Foest, R., Schmidt, M., Hannemann, M., Basner, R. (1994). On the Ions in an Argon-Hexamethyldisiloxane Radio-Frequency-Discharge. In: Christophorou, L.G., James, D.R. (eds) Gaseous Dielectrics VII. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1295-4_64

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  • DOI: https://doi.org/10.1007/978-1-4899-1295-4_64

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-1297-8

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