Abstract
Defect states in the oxide, residing close to the Si:SiO2 interface, are responsible for the generation of random telegraph signals in small-area MOSFETs and 1/f noise in large devices. By improving resolution and extending the frequency range of the conventional conductance technique, we demonstrate that these states are observable in measurements at room temperature and in device-quality oxides. A loss peak due to the normal interface states is seen, together with a plateau on the low-frequency side due to the trapping centres in the oxide.
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© 1988 Springer Science+Business Media New York
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Uren, M.J., Kirton, M.J., Collins, S. (1988). Observation of “1/f-Noise States” in Conductance Measurements on Mos Structures. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_36
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_36
Publisher Name: Springer, Boston, MA
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