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Diffusion and Dissociation of Two-Dimensional Islands on FCC Metal (100) Surfaces

  • Zhenyu Zhang
  • Zhu-Pei Shi
  • Kenneth Haug
Part of the NATO ASI Series book series (NSSB, volume 360)

Abstract

The mobility and the stability of small two-dimensional islands on a substrate are basic issues of surface science and thin-film growth. In this article, we present our main results from a series of theoretical studies of island diffusion and dissociation on several fcc metal (100) surfaces, with and without the effects of hydrogen as surface impurities. We found that a collective atomic process, shearing of a dimer belonging to a compact island, in many cases provides the most effective pathway for island diffusion. Consideration of this novel atomic process leads to the possibility of observing a new set of critical island sizes in dynamical island growth or coarsening. When H is introduced into the Ni system, the mobility of adatoms and islands of all sizes are enhanced. This conclusion suggests that H will function as an anti-surfactant in Ni(100) homoepitaxy.

Keywords

Island Size Embed Atom Method Adatom Diffusion Island Edge Corner Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Zhenyu Zhang
    • 1
  • Zhu-Pei Shi
    • 1
  • Kenneth Haug
    • 2
  1. 1.Solid State DivisionOak Ridge National LaboratoryOak RidgeUSA
  2. 2.Department of ChemistryLehigh UniversityBethlehemUSA

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