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Stress-Driven Morphological Changes of SiGe Films and SiGe/Si Multilayers Grown on Vicinal Si(001) Substrates

  • C. Teichert
  • Y. H. Phang
  • L. J. Peticolas
  • J. C. Bean
  • M. G. Lagally
Part of the NATO ASI Series book series (NSSB, volume 360)

Abstract

During the growth of SiGe films on vicinal Si(001), stress-induced step bunching of the preexisting substrate steps occurs as an early mechanism of elastic strain relief. We use atomic-force microscopy to investigate the resulting ripple morphologies as a function of substrate miscut. The ripples always follow the step orientation. However, for a specific vicinality the step bunch transforms into zigzag pattern consisting of energetically more favorable {105} facets. We investigate the influence of the ripples on the arrangement of the subsequently evolving three-dimensional islands. Finally, the evolution of the step bunches in SiGe/Si multilayer films is discussed.

Keywords

Scanning Tunneling Microscopy Multilayer Film Alloy Layer Growth Front Substrate Step 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • C. Teichert
    • 1
  • Y. H. Phang
    • 1
  • L. J. Peticolas
    • 2
  • J. C. Bean
    • 2
  • M. G. Lagally
    • 1
  1. 1.Dept. of Materials Science and EngineeringUniversity of Wisconsin-MadisonMadisonUSA
  2. 2.Lucent TechnologiesMurray HillUSA

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