GaAs Layers Grown by the Close-Spaced Vapor Transport Technique Using Two Transport Agents
A parallel study is made on two sets of GaAs homolayers grown with a close-spaced vapor transport system and different transport agents. One set was grown leaving fixed all growth parameters except for the water vapor concentration. The second set was grown using atomic hydrogen as the only reactant, here just the spacer thickness between the source and the substrate was varied. Scanning electron microscopy and energy dispersive spectroscopy were used to characterize the layers. For the first set it was observed that the low water vapor concentrations used during the growth process produced As-rich surfaces, while larger ones produced Ga-rich surfaces. For the second set, grown with atomic hydrogen, it was found a phenomenological relationship among the spacer thickness, the growth rate and the surface morphology, these films came out to be Ga-rich surfaces, probably because of the high temperature effect and the atomic hydrogen interaction with the source and the substrate during the growth process.
KeywordsGaAs Layer Water Vapor Concentration Space Thickness Transport Agent GaAs Film
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