Advertisement

Semiconductor Materials and Structures for Optical-Communication Devices

  • R. C. Goodfellow
Part of the Physics of Solids and Liquids book series (PSLI)

Abstract

There is an exciting urgency in the development of the necessary optoelectronic components for trunk telecommunications, local area networks, cable-television distribution, and avionic communications. The optoelectronic devices currently being incorporated into optical-communications systems are quite sophisticated but further advanced components are required for future systems, which make strong demands on cost, complexity, and performance. These advanced optoelectronics components exploit particular materials parameters and the optimization of these parameters has led to the need for several new group III–V materials, new materials structures and alloy combinations, and novel preparation techniques. The analysis of binary, ternary, or quaternary alloy lattice-matched multilayer crystals is involved and complicated but is proving possible with the combination of several basic assessment techniques. We shall outline the present and advanced optical-communication-system trends and identify the important components and materials required, and then consider the appropriate preparation and assessment techniques and discuss some materials properties particularly relevant for optical-communication devices.

Keywords

Active Layer Semiconductor Material Avalanche Photodiode Indium Phosphide Multimode Fiber 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

Recommended books for the topics covered in this chapter are as follows

  1. M. J. Adams, An Introduction to Optical Waveguides, Wiley, Chichester (1981).Google Scholar
  2. H. Kressel, ed., Semiconductor Devices for Optical Communications, Topics in Applied Physics, Vol. 39, Springer-Verlag, Berlin (1980).Google Scholar
  3. T. Pearsall, ed., Galn AsP Alloy Semiconductors Wiley, N.Y. (1982).Google Scholar
  4. M. J. Howes and D. V. Morgan, eds., Optical Fibre Communications, Wiley, Chichester (1980).Google Scholar
  5. G. H. B. Thompson, Physics of Semiconductor Laser Devices, Wiley, Chichester (1980).Google Scholar
  6. Arthur C. Clark, Imperial Earth, Pan Books (1975).Google Scholar
  7. Robert M. Gagliardi and Sherman Karp, Optical Communications, Wiley Interscience (1976).Google Scholar
  8. Y. Suematsu and K. I. Iga, Introduction to Optical Fibre Communications (Pure and Applied Optics Series), Wiley Interscience (1982).Google Scholar

The specific references quoted in the text are as follows

  1. 1.
    C.A. Burrus and B. I. Miller, Opt. Commun. 4, 307 (1971).ADSCrossRefGoogle Scholar
  2. 2.
    M. N. Zarga’ryants, Yu. S. Mezin and S. I. Kolonenkova, Sov. Sov. Semicond. (Engl. Trans.) 4, 1371 (1971).Google Scholar
  3. 3.
    M. Ettenberg, K. Hudson and H. Lockwood, IEEE J. Quantum Electron. QE9, 987 (1973).ADSCrossRefGoogle Scholar
  4. 4.
    I. G. A. Davies, T. Bricheno, A. R. Goodwin and R. G. Plumb, Proc. 6th Eur. Conf. Optical Communications, p. 199, IEE, Copenhagen (1980).Google Scholar
  5. 5.
    W. J. Stewart, Proc. 5th Eur. Conf. Optical Communications, paper 12.3, IEE, Amsterdam (1979).Google Scholar
  6. 6.
    R. A. Abram, R. W. Allen and R. C. Goodfellow, J. Appl. Phys. 46, 3468 (1975).ADSCrossRefGoogle Scholar
  7. 7.
    R. C. Goodfellow, A. C. Carter, G. J. Rees and R. Davis, IEEE Trans. Electron Devices, ED-28, 365 (1981).ADSCrossRefGoogle Scholar
  8. 8.
    M. J. Howes and D. V. Morgan, eds. Opt. Fibre Communications, p. 46, Wiley, N.Y. (1980).Google Scholar
  9. 9.
    H. Namizaki, H. Kan, M. Ishii and A. Ito, Appl. Phys. Lett. 24, 486 (1974).ADSCrossRefGoogle Scholar
  10. 10.
    A. C. Carter, R. C. Goodfellow and R. Davis, Proc. 6th Eur. Conf. Optical Communications, p. 211, IEEE, Copenhagen (1980).Google Scholar
  11. 11.
    A. C. Carter, R. C. Goodfellow and I. Griffith, Proc. IEDM, p. 118, IEEE (Washington, 1979).Google Scholar
  12. 12.
    J. Ure, J. Humpage, A. C. Carter and R. C. Goodfellow, 4th IEEE Spec. Conf. on Technology of Electroluminescent Diodes (Brighton, 1980).Google Scholar
  13. 13.
    F. D. King and A. J. Springthorpe, J. Electron. Mater. 4, 243 (1975).ADSCrossRefGoogle Scholar
  14. 14.
    Z. I. Alferov, W. M. Andreev, B. V. Egoros and A. V. Syrbu, Sov. Phys. Semicond. (Engl. Trans.) 7, 1123 (1977).Google Scholar
  15. 15.
    R. A. Abram and R. C. Goodfellow, Electron. Lett. 16, 14 (1980).CrossRefGoogle Scholar
  16. 16.
    M. Abe, I. Umebu, O. Hasegawa, S. Yamakoshi, T. Yamaoka, T. Kotami, H. Okadu and H. Takanaski, IEEE Trans. Electron Devices ED-24, 880 (1977).Google Scholar
  17. 17.
    L. R. Dawson, V. G. Keramidas and C. L. Ziptel, Bell Syst. Tech. J. 59, 161 (1980).Google Scholar
  18. 18.
    W. T. Tsang, N. A. Olsson and R. A. Logan, Appl. Phys. Lett. 42, 650 (1983).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1986

Authors and Affiliations

  • R. C. Goodfellow
    • 1
  1. 1.Allen Clark Research CentrePlessey Research (Caswell) Ltd.Caswell, Towcester, NorthantsEngland

Personalised recommendations