Trends in Crystal Growth
In the preceding chapters we have seen how high growth temperatures lead to high point-defect and line-defect concentrations, impurity incorporation and diffusion. The convection effects associated with high-temperature growth lead to temporal and spatial non-uniformity in growth rate, whilst the broad-waveband radiation and the high temperature of the molecular species involved give rise to a multiplicity of chemical reactions and growth mechanisms. Theoretical analysis of the growth process is difficult if not impossible. For these reasons, early theories, which assumed for simplicity that growth occurred from the adsorption of a single precursor species, was kinetically limited by mobility on the growth surface and was unaffected by the desorption of product species, were of little practical significance. Growth of good quality single-crystals remained essentially an art rather than a science.
KeywordsMultiple Quantum Well High Temperature Growth Epitaxial Lateral Overgrowth Atomic Layer Epitaxy Preceding Chapter
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