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Heterojunction Bipolar Transistors

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Compound and Josephson High-Speed Devices

Part of the book series: Microdevices ((MDPF))

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Abstract

This chapter describes heterojunction bipolar transistors (HBTs), focusing specifically on A1GaAs—GaAs HBTs for high-speed applications. We give a historical overview of HBTs and discuss the potential advantages of HBTs over other typical high-speed devices (Si bipolar transistors and GaAs field-effect transistors (FETs)). The following section begins with the basic device structure and HBT operation. Section 7.3 deals with fabrication techniques, including epitaxial-layer preparation and processing. High-frequency characteristics and related electron transport peculiar to HBTs are discussed in Section 7.4. The performance of integrated circuits is described in Section 7.5. The last section summarizes state-of-the-art HBT technology and prospects for the future.

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Author information

Authors and Affiliations

  1. NTT LSI Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-01, Japan

    Tadao Ishibashi

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  1. Tadao Ishibashi
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Editors and Affiliations

  1. Fujitsu Techno Research Ltd., 1812-10 Shimonumabe, Nakahara-ku, Kawasaki 211, Japan

    Takahiko Misugi

  2. Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, 243-01, Atsugi, Japan

    Akihiro Shibatomi

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© 1993 Springer Science+Business Media New York

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Ishibashi, T. (1993). Heterojunction Bipolar Transistors. In: Misugi, T., Shibatomi, A. (eds) Compound and Josephson High-Speed Devices. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9774-9_7

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  • DOI: https://doi.org/10.1007/978-1-4757-9774-9_7

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-9776-3

  • Online ISBN: 978-1-4757-9774-9

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