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HEMT Devices

  • Masayuki Abe
  • Takashi Mimura
Part of the Microdevices book series (MDPF)

Abstract

A decade has now passed since the 1980 announcement of the high-electronmobility transistor (HEMT),(1) and HEMT technology has certainly opened the door to new possibilities for ultrahigh-speed large-scale integration (LSI)—verylarge-scale integration (VLSI) applications,(2) and high-frequency microwave devices applications. The evolution of high-speed low-power HEMT devices is the result of continuous technological progress utilizing the superior electronic properties due to the supermobility of the GaAs—A1GaAs heterojunction structure. Electron mobility in the conventional GaAs metal-semiconductor field-effect transistor (MESFET) channel with typical donor concentrations of around 1017 cm−3 ranges from 4000 to 5000 cm2/V-s at room temperature. The mobility in the channel at 77 K is not too much higher than at room temperature due to ionized impurity scattering. In undoped GaAs, however, electron mobility of 2–3 × 105 cm2/V-s has been obtained at 77 K. The mobility of GaAs with feasibly high electron concentrations for facilitating the fabrication of devices was found to increase through modulation-doping techniques demonstrated in GaAs-AIGaAs superlattices.(3) As the first application of this electron-mobility-enhanced phenomena to the new transistor approach, a HEMT, based on modulation-doped GaAs-A1GaAs single-heterojunction structures, was invented(1) and shown to greatly improve the 77-K channel mobility.

Keywords

Threshold Voltage Power Dissipation Gate Length Static Random Access Memory Switching Delay 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    T. Mimura, S. Hiyamizu, T. Fujii, and K. Nanbu, Jpn. J. Appl. Phys. 19, L225 - L227 (1980).ADSCrossRefGoogle Scholar
  2. 2.
    M. Abe, T. Mimura, N. Yokoyama, and H. Ishikawa, IEEE Trans. Electron Dev. ED-29, 1088–1093 (1982).Google Scholar
  3. 3.
    R. Dingle, H. L. Störmer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 33, 665–667 (1978).ADSCrossRefGoogle Scholar
  4. 4.
    T. Mimura, K. Joshin, S. Hiyamizu, K. Hikosaka, and M. Abe, Jpn. J. Appl. Phys. 20, L598 - L600 (1981).ADSCrossRefGoogle Scholar
  5. 5.
    P. N. Tung, P. Delescluse, D. Delagebeaudeuf, M. Laviron, J. Chaplart, and N. T. Linh, Electron. Lett. 18, 517–519 (1982).CrossRefGoogle Scholar
  6. 6.
    J. V. DiLorenzo, R. Dingle, M. Feuer, A. C. Gossard, R. Hendel, J. C. Hwang, A. Kastalsky, V. G. Kerasmidas, R. A Kiehl, and P. O’Connor, Tech. Dig., Int. Electron Devices Meet., pp. 578–581 (1982).Google Scholar
  7. 7.
    N. C. Cirillo, Jr., and J. K. Abrokwah, 43rd Ann. Device Res. Conf., paper IIA-7 (1985).Google Scholar
  8. 8.
    N. J. Shah, S.-S. Pei, C. W. Tu, and R. C. Tiberio, IEEE Trans. Electron Dev. ED-33, 543547 (1986).Google Scholar
  9. 9.
    Y. Awano, M. Kosugi, T. Mimura, and M. Abe, IEEE Electron Dev. Lett. EDL-8, 451–453 (1987).Google Scholar
  10. 10.
    K. Nishiuchi, T. Mimura, S. Kuroda, S. Hiyamizu, H. Nishi, and M. Abe, 41st Ann. Device Res. Conf. paper IIA-8 (1983).Google Scholar
  11. 11.
    M. Abe, T. Mimura, K. Nishiuchi, A. Shibatomi, and M. Kobayashi, Tech. Dig., IEEE GaAs IC Symp., pp. 158–161 (1983).Google Scholar
  12. 12.
    R. H. Hendel, S. S. Pei, C. W. Tu, B. J. Roman, N. J. Shah, and R. Dingle, Tech. Dig., Int. Electron Devices Meet. pp. 857–858 (1984); see also Electron. Dec., 22 (1985).Google Scholar
  13. 13.
    S. Kuroda, T. Mimura, M. Suzuki, N. Kobayashi, K. Nishiuchi, A. Shibatomi, and M. Abe, Tech. Dig., IEEE GaAs IC Symp., pp. 125–128 (1984).Google Scholar
  14. 14.
    S. Notomi, Y. Awano, M. Kosugi, T. Nagata, K. Kosemura, M. Ono, N. Kobayashi, H. Ishiwari, K. Odani, T. Mimura, and M. Abe, IEEE GaAs IC Symp., pp. 177–180 (1987).Google Scholar
  15. 15.
    M. Abe, T. Mimura, S. Notomi, K. Odani, K. Kondo, and M. Kobayashi, J. Vac. Sci. Technol. A 5, 1387–1392 (1987).ADSCrossRefGoogle Scholar
  16. 16.
    K. Kajii, Y. Watanabe, M. Suzuki, I. Hanyu, M. Kosugi, K. Odani, T. Mimura, and M. Abe, CICC Digest Tech. Papers, 199–201 (1987).Google Scholar
  17. T. Akinwande et al., ISSCC Dig. Tech.,pp. 232–233 (1989).Google Scholar
  18. 18.
    M. Abe, T. Mimura, N. Kobayashi, M. Suzuki, M. Kosugi, M. Nakayama, K. Odani, and I. Hanyu, IEEE Trans. Electron Dec. 36, 2021–2031 (1989).ADSGoogle Scholar
  19. M. Suzuki et al., ISSCC Dig. Tech.,pp. 48–49 (1991).Google Scholar
  20. S. Notomi et al., ISSCC Dig. Tech.,pp. 152–153 (1991).Google Scholar
  21. 21.
    M. Abe and T. Mimura, Tech. Dig. IEEE GaAs IC Symp., pp. 127–130 (1990).Google Scholar
  22. 22.
    M. Abe and T. Mimura, IEEE J. Solid-State Circuits 26, 1337–1344 (1991).ADSCrossRefGoogle Scholar
  23. 23.
    T. Mimura, S. Hiyamizu, K. Joshin, and K. Hikosaka, Jpn. J. Appl. Phys. 20, L317 L319 (1981).Google Scholar
  24. 24.
    S. Hayamizu, Collect. Pap. Int. Symp. Mol. Beam Epitaxy Relat. Clean Surf. Tech., 2nd ed., paper A-7–1, pp. 113 116 (1982).Google Scholar
  25. 25.
    D. V. Lang, R. A. Logan, and M. Jaros, Phys. Rev.. B 19, 1015–1030 (1979).ADSCrossRefGoogle Scholar
  26. 26.
    C. P. Lee, D. Hou, S. J. Lee, D. L. Miller, and R. J. Anderson, IEEE GaAs IC Symp., pp. 162–165 (1983).Google Scholar
  27. 27.
    K. Joshin, T. Mimura, M. Niori, M. Yamashita, K. Kosemura, and J. Saito, IEEE MTT-S Dig. pp. 563–565 (1983).Google Scholar
  28. 28.
    L. H. Caminitz, P. J. Tasker, H. Lee, D. V. D. Merwe, and L. F. Eastman, IEDM Tech. Dig., pp. 360–363 (1984).Google Scholar
  29. 29.
    P. C. Chao, S. C. Palmateer, P. M. Smith, U. K. Mishra, K. H. G. Duh, and J. C. M. Hwang, IEEE Electron Dev. Lett. EDL-6, 531–533 (1985).Google Scholar
  30. 30.
    M. Feng, H. Kanber, V. K. Eu, E. Watkins, and L. R. Hackett, Appl. Phys. Lett. 44, 231 233 (1984).ADSGoogle Scholar
  31. 31.
    W. Chye and C. Huang, IEEE Electron Dec. Lett. EDL-3, 401–403 (1982).Google Scholar
  32. 32.
    E. Mitani, Conf. Advanced Heterostructure Transistors, Hawaii (1990).Google Scholar
  33. 33.
    U. K. Mishra, A. S. Brown, L. M. Jelloian, M. Thompson, L. D. Nguyen, and S. E. Rosenbaum, IEDM Tech. Dig., pp. 101–104 (1989).Google Scholar
  34. 34.
    H. Fukui, IEEE Trans. Electron Dev. ED-26, 1032 (1979).Google Scholar
  35. 35.
    J. Berenz, K. Nakano, and K. Weller, 1984 IEEE MTT-S Dig., p. 83 (1984).Google Scholar
  36. 36.
    S. Asai, K. Joshin, Y. Hirachi, and M. Abe, 1987 IEEE MTT-S Dig., pp. 1019–1022 (1987).Google Scholar
  37. 37.
    I. Hanyu, S. Asai, M. Nunokawa, K. Joshin, S. Ohmura, Y. Aoki, T. Aigo, and Y. Hirachi, Electron. Lett. 24, 1327–1328 (1988).ADSCrossRefGoogle Scholar
  38. 38.
    M. Iwakuni, M. Niori, T. Saito, T. Hamabe, H. Kurihara, K. Joshin, and M. Mikuni, IEEE MTT-S Dig., pp. 551–553 (1985).Google Scholar
  39. 39.
    N. Okubo, M. Iwakuni, and K. Joshin, FUJITSU 38, 25–30 (1987).Google Scholar
  40. 40.
    H. Suzuki, M. Ohishi, N. Kaifu, S. Ishikawa, and T. Kasuga, Astron. Soc. Jpn. 38, 911 (1986).ADSGoogle Scholar
  41. 41.
    K. Hikosaka, J. Saito, T. Mimura, and M. Abe, in Proc. Nat. Cony. (Dept. Semiconductor Mater.), IECE Japan., No. 268 (1983).Google Scholar
  42. 42.
    P. M. Smith, U. K. Mishra, P. C. Chao, S. C. Palmateer, and J. C. M. Hwang, IEEE Electron Dev. Lett. EDL-6, 86 87 (1985).Google Scholar
  43. 43.
    A. K. Gupta, R. T. Chen, E. A. Sovero, and J. A. Higgins, 1985 IEEE MTT-S Dig., pp. 50 53 (1985).Google Scholar
  44. 44.
    K. Hikosaka, Y. Hirachi, T. Mimura, and M. Abe, IEEE Electron Dev. Lett. EDL-6, 341 343 (1985).Google Scholar
  45. 45.
    K. Hikosaka, Y. Hirachi, and M. Abc, IEEE Trans. Electron Dev. ED-33, 583–589 (1896).Google Scholar
  46. 46.
    P. Saunier and J. W. Lee, IEEE Elecron Dev. Lett. EDL-7, 503–505 (1986).Google Scholar
  47. 47.
    E. Sovero, A. K. Gupta, J. A. Higgins, and W. A. Hill, IEEE Trans. Electron Dev. ED-33, 1434–1438 (1986).Google Scholar
  48. 48.
    K. Hikosaka, N. Hidaka, Y. Hirachi, and M. Abe, IEEE Electron Dew. Lett. EDL-8, 521–523 (1987).Google Scholar
  49. 49.
    K. Kamei, S. Hori, H. Kawasaki, K. Shibata, M. Mashita, and Y. Ashizawa, 11th Int. Symp. on GaAs and Related Compounds, pp. 545–550 (1984).Google Scholar
  50. 50.
    H. Hida, K. Ohata, Y. Suzuki, and H. Toyoshima, IEEE Trans. Electron Dev. ED-33, 601–607 (1986).Google Scholar
  51. 51.
    H. Takakuwa, K. Tanaka, Y. Mori, M. Arai, Y. Kato, and S. Watanabe, IEEE Trans. Electron Dev. ED-33, 595–600 (1986).Google Scholar
  52. 52.
    M. Laviron, D. Delagebeaudeuf, P. Delescluse, J. Chaplart, and T. Linro, Electron. Lett. 17, 536–537 (1981).ADSCrossRefGoogle Scholar
  53. 53.
    W. L. Jones, S. K. Ageno, and T. Y. Sato, Electron. Lett. 23, 844–845 (1987).ADSCrossRefGoogle Scholar
  54. 54.
    S. G. Bandy, C. K. Nishimoto, C. Yuen, R. A. Larue, M. Day, J. Eckstein, Z. C. H. Tan, C. Webb, and G. A. Zdasiuk, IEEE Trans. Microwave Theory Techniques MTT-35, 1494–1500 (1987).Google Scholar
  55. 55.
    S. Hiyamizu, T. Mimura, and T. Ishikawa, Jpn. J. Appl. Phys. 21, 161–168 (1982).Google Scholar
  56. 56.
    M. Abe, T. Mimura, K. Nishiuchi, A. Shibatomi, and M. Kobayashi, IEEE J. Quantum Electron. QE-22, 1870–1879 (1986).Google Scholar
  57. 57.
    T. Mimura, M. Abe, and M. Kobayashi, FUJITSU Sci. Tech. J. 21, 370–379 (1985).Google Scholar
  58. 58.
    J. Saito, T. Igarashi, T. Nakamura, K. Kondo, and A. Shibatomi, J. Cryst. Growth 81, 188192 (1987).Google Scholar
  59. 59.
    H. Tanaka, H. Itoh, T. O’Hori, M. Takikawa, K. Kasai, M. Takechi, M. Suzuki, and J. Komeno, Jpn. J. Appl. Phys. 26, L1456 - L1458 (1987).ADSCrossRefGoogle Scholar
  60. 60.
    E. J. Thrush, G. Wale-Evans, J. E. A. Whiteaway, B. L. Lamb, D. R. Wight, N. G. Chew, A. G. Cullis, and R. J. M. Griffiths, J. Electron. Mater. 13, 969–988 (1984).ADSCrossRefGoogle Scholar
  61. J. Komeno et al., J. Cryst. Growth,105 30–34 (1990).Google Scholar
  62. 62.
    M. Abe, T. Mimura, K. Nishiuchi, A. Shibatomi, M. Kobayashi, and T. Misugi, in: Semiconductors and Semimetals ( R. K. Willardson and A. C. Beer, eds.), pp. 249–278, Academic Press, New York (1987).Google Scholar
  63. 63.
    Y. Nakayama, K. Suyama, H. Shimizu, N. Yokoyama, A. Shibatomi, and H. Ishikawa, ISSCC Dig. Tech., pp. 48–49 (1983).Google Scholar
  64. 64.
    N. Toyoda, N. Uchitomi, Y. Kitaura, M. Mochizuki, K. Kanazawa, T. Terada, Y. Ikawa, and A. Hojo, ISSCC Dig. Tech., pp. 206–207 (1985).Google Scholar
  65. 65.
    A. R. Schlier, S. S. Pei, N. J. Shah, C. W. Tu, and G. E. Mahoney, IEEE GaAs IC Symp., pp. 91–93 (1985).Google Scholar
  66. 66.
    D. K. Arch, B. K. Betz, P. J. Vold, J. K. Abrokwah, and N. C. Cirillo, Jr., IEEE Electron Dev. Lett. EDL-7, 700–702 (1986).Google Scholar
  67. 67.
    Y. Watanabe, K. Kajii, K. Nishiuchi, M. Suzuki, I. Hanyu, M. Kosugi, K. Odani, A. Shibatomi, T. Mimura, M. Abe, and M. Kobayashi, ISSCC Dig. Tech., 29, 80–81 (1986).Google Scholar
  68. 68.
    N. C. Cirillo, Jr., D. K. Arch, P. J. Vold, B. K. Betz, I. R. Mactaggart, and B. L. Grung, IEEE GaAs IC Symp., pp. 257–260 (1987).Google Scholar
  69. 69.
    Y. Watanabe, S. Saito, N. Kobayashi, M. Suzuki, T. Yokoyama, E. Mitani, K. Odani, T. Mimura, and M. Abe, ISSCC Dig. Tech., pp. 86–87 (1988).Google Scholar
  70. 70.
    Y. Asada et al., ISSCC Dig. Tech. Papers,pp. 186–187 (1990).Google Scholar
  71. 71.
    T. Yokoyama et al., IEEE Electron Dev. Lett. 11 197–199 (1990).Google Scholar
  72. 72.
    S. Nishi, S. Seki, T. Saito, H. Fujishiro, Y. Sano, and K. Kaminishi, Trans. IEICE (C) J70-C, 724–730 (1987).Google Scholar
  73. 73.
    S. Seki et al., IEDM Tech. Dig., pp. 770–773 (1988).Google Scholar
  74. 74.
    C. P. Lee, N. H. Sheng, H. F. Lewis, H. T. Wang, D. L. Miller, and J. Donovan, IEDM Tech. Dig., pp. 324–327 (1985).Google Scholar
  75. 75.
    M. Abe, T. Mimura, K. Nishiuchi, and N. Yokoyama, in: VLSI Electronics: Microstructure Science, Vol. 1, GaAs Microelectronics (N. G. Einspruch and W. R. Wisseman, eds.), pp. 333365, Academic Press, New York (1985).Google Scholar
  76. 76.
    Y. Ishii, M. Ino, M. Idda, M. Hirayama, and M. Ohmori, IEEE GaAs IC Symp., pp. 121124 (1984).Google Scholar
  77. 77.
    K. Nishiuchi, N. Kobayashi, S. Kuroda, S. Notomi, T. Mimura, M. Abe, and M. Kobayashi, ISSCC Dig. Tech. 27, 48–49 (1984).Google Scholar
  78. 78.
    N. H. Sheng, H. T. Wang, S. J. Lee, G. L. Sullivan, and D. L. Miller, IEEE GaAs IC Symp., pp. 97–100 (1986).Google Scholar
  79. 79.
    T. Awaya et al., ISSCC Dig. Tech.,pp. 130–131 (1987).Google Scholar
  80. 80.
    A. I. Akinwande et al., IEDM,pp. 983–986 (1990).Google Scholar

Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Masayuki Abe
    • 1
  • Takashi Mimura
    • 1
  1. 1.Fujitsu Laboratories Ltd.AtsugiJapan

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