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GaAs ICs for Digital Applications

  • Chapter
Compound and Josephson High-Speed Devices

Part of the book series: Microdevices ((MDPF))

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Abstract

GaAs integrated circuits (ICs) are used for digital circuits because they feature high-speed operation, low power dissipation, and good radiation hardness. GaAs IC chips consist of circuit elements and interconnections on a semi-insulating substrate. High-speed IC chips have to be mounted in low-capacitance packages for low-distortion waveform transmission. The most significant element of an IC is the switching transistor, which determines the intrinsic switching speed of the IC. This chapter describes MESFETs (metal—semiconductor field-effect transistors) and MIS/SIS FETs (metal-insulator-semiconductor and/or semiconductorinsulator-semiconductor FETs) as switching transistors in ICs. Self-aligned FET structures and process technologies for low-resistance source and drain n + layers are essential to obtain very high speed operation, which is considered the role for GaAs ICs, especially in Japan.

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Author notes

  1. Masahiro Hirayama & Kazuyoshi Asai

    Present address: Masahiro Hirayama and Kazuyoshi Asai: NTT Electronics Technology Corporation, 3-1 Wakamiya Morinosato, Atsugi City, Kanagawa, 243-01, Japan

Authors and Affiliations

  1. NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi, 243-01, Japan

    Masahiro Hirayama, Kazuyoshi Asai & Takashi Mizutani

Authors
  1. Masahiro Hirayama
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  2. Kazuyoshi Asai
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  3. Takashi Mizutani
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Editors and Affiliations

  1. Fujitsu Techno Research Ltd., 1812-10 Shimonumabe, Nakahara-ku, Kawasaki 211, Japan

    Takahiko Misugi

  2. Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, 243-01, Atsugi, Japan

    Akihiro Shibatomi

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© 1993 Springer Science+Business Media New York

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Hirayama, M., Asai, K., Mizutani, T. (1993). GaAs ICs for Digital Applications. In: Misugi, T., Shibatomi, A. (eds) Compound and Josephson High-Speed Devices. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9774-9_4

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  • DOI: https://doi.org/10.1007/978-1-4757-9774-9_4

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