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GaAs ICs for Digital Applications

  • Masahiro Hirayama
  • Kazuyoshi Asai
  • Takashi Mizutani
Part of the Microdevices book series (MDPF)

Abstract

GaAs integrated circuits (ICs) are used for digital circuits because they feature high-speed operation, low power dissipation, and good radiation hardness. GaAs IC chips consist of circuit elements and interconnections on a semi-insulating substrate. High-speed IC chips have to be mounted in low-capacitance packages for low-distortion waveform transmission. The most significant element of an IC is the switching transistor, which determines the intrinsic switching speed of the IC. This chapter describes MESFETs (metal—semiconductor field-effect transistors) and MIS/SIS FETs (metal-insulator-semiconductor and/or semiconductorinsulator-semiconductor FETs) as switching transistors in ICs. Self-aligned FET structures and process technologies for low-resistance source and drain n + layers are essential to obtain very high speed operation, which is considered the role for GaAs ICs, especially in Japan.

Keywords

Threshold Voltage Rapid Thermal Annealing Refractory Metal Gate Insulator Schottky Barrier Height 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Masahiro Hirayama
    • 1
  • Kazuyoshi Asai
    • 1
  • Takashi Mizutani
    • 1
  1. 1.NTT LSI LaboratoriesAtsugiJapan

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