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Coherent Optical Interactions in Semiconductors pp 157–179Cite as

Nonlinear Coherent Optical Effects in Semiconductors

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Part of the book series: NATO ASI Series ((NSSB,volume 330))

Abstract

The resonant illumination by coherent optical radiation of an electronic excitation creates a quantum mechanical coherent superposition of the initial and final states of the transition. The nonlinear optical properties of this state can be used to provide a sensitive measurement of many fundamental parameters of the material including transport, elastic and inelastic scattering, energy level splittings between nearly degenerate states, energy relaxation, as well as associated information such as Landé g-factors, the degree of state mixing and symmetry.

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Author information

Authors and Affiliations

  1. Harrison M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor, MI, 48109, USA

    Duncan G. Steel, Hailin Wang, Min Jiang & Kyle Ferrio

  2. Fachbereich Physik, Philipps-Universität, Renthof 5, W-3550, Marburg, Germany

    Steven Cundiff

Authors
  1. Duncan G. Steel
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  2. Hailin Wang
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  3. Min Jiang
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  4. Kyle Ferrio
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  5. Steven Cundiff
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Editor information

Editors and Affiliations

  1. University of Cambridge, Cambridge, UK

    R. T. Phillips

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© 1994 Springer Science+Business Media New York

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Steel, D.G., Wang, H., Jiang, M., Ferrio, K., Cundiff, S. (1994). Nonlinear Coherent Optical Effects in Semiconductors. In: Phillips, R.T. (eds) Coherent Optical Interactions in Semiconductors. NATO ASI Series, vol 330. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9748-0_7

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  • DOI: https://doi.org/10.1007/978-1-4757-9748-0_7

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-9750-3

  • Online ISBN: 978-1-4757-9748-0

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