Vertical Transport Studied by Sub-Picosecond Four-Wave Mixing Experiments

  • J. Feldmann
  • G. von Plessen
  • T. Meier
  • P. Thomas
  • E. O. Göbel
  • K. W. Goossen
  • D. A. B. Miller
  • J. E. Cunningham
Part of the NATO ASI Series book series (NSSB, volume 330)


Since the realization of semiconductor heterostructures vertical transport of electrically injected carriers has been one of the most interesting topics in semiconductor physics.1,2 Precise engineering of semiconductor layers and thus electronic energy levels allows the tailoring of transport properties over a wide range and has even led to the invention of semiconductor devices relying on ballistic electron transport.1,3 In addition, negative differential resistance (NDR) can be realized by using tunneling diodes containing double-barrier heterostructures4 or a superlattice structure.5,6 Actually, the proposal of Esaki and Tsu5 to use electronic Bloch oscillations in the miniband of a semiconductor superlattice to realize NDR marked the starting point for the physics and applications of semiconductor heterostructures.


Negative Differential Resistance Multiple Quantum Well Tunneling Time Superlattice Structure Bloch Oscillation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media New York 1994

Authors and Affiliations

  • J. Feldmann
    • 1
  • G. von Plessen
    • 1
  • T. Meier
    • 1
  • P. Thomas
    • 1
  • E. O. Göbel
    • 1
  • K. W. Goossen
    • 2
  • D. A. B. Miller
    • 2
  • J. E. Cunningham
    • 2
  1. 1.Department of Physics and Materials Sciences CenterPhilipps-University of MarburgMarburgGermany
  2. 2.AT&T Bell LaboratoriesHolmdelUSA

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