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Vertical Transport Studied by Sub-Picosecond Four-Wave Mixing Experiments

  • Chapter
Coherent Optical Interactions in Semiconductors

Part of the book series: NATO ASI Series ((NSSB,volume 330))

Abstract

Since the realization of semiconductor heterostructures vertical transport of electrically injected carriers has been one of the most interesting topics in semiconductor physics.1,2 Precise engineering of semiconductor layers and thus electronic energy levels allows the tailoring of transport properties over a wide range and has even led to the invention of semiconductor devices relying on ballistic electron transport.1,3 In addition, negative differential resistance (NDR) can be realized by using tunneling diodes containing double-barrier heterostructures4 or a superlattice structure.5,6 Actually, the proposal of Esaki and Tsu5 to use electronic Bloch oscillations in the miniband of a semiconductor superlattice to realize NDR marked the starting point for the physics and applications of semiconductor heterostructures.

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Authors and Affiliations

  1. Department of Physics and Materials Sciences Center, Philipps-University of Marburg, D-35032, Marburg, Germany

    J. Feldmann, G. von Plessen, T. Meier, P. Thomas & E. O. Göbel

  2. AT&T Bell Laboratories, Holmdel, New Jersey, 07733, USA

    K. W. Goossen, D. A. B. Miller & J. E. Cunningham

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  1. J. Feldmann
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  2. G. von Plessen
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  5. E. O. Göbel
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  7. D. A. B. Miller
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Editors and Affiliations

  1. University of Cambridge, Cambridge, UK

    R. T. Phillips

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Feldmann, J. et al. (1994). Vertical Transport Studied by Sub-Picosecond Four-Wave Mixing Experiments. In: Phillips, R.T. (eds) Coherent Optical Interactions in Semiconductors. NATO ASI Series, vol 330. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9748-0_10

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  • DOI: https://doi.org/10.1007/978-1-4757-9748-0_10

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