Most work in the CL characterization of semiconductors was devoted in recent years to III-V and II-VI compounds. These compounds found applications in a wide variety of electronic and optoelectronic devices. The group IV materials, Si and Ge, although the first and the most important used in semiconductor technology, have indirect energy gaps of about 1 eV, which limits both the optical applications and optical characterization of these materials. Many of the III-V and II-VI materials, however, have direct gaps with greater widths corresponding to visible photon energies.
KeywordsQuantum Well Epitaxial Layer Multiple Quantum Well Multiple Quantum Well Structure Quantum Well Wire
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