Focal Plane Imaging Arrays Based on GaAs/AlGaAs Quantum Well Infrared Photodetectors
We summarize our work on the development of focal plane imaging arrays based on GaAs/AlGaAs quantum well infrared photodetectors. The infrared of interest here is from 3 to 12 μm in wavelength, and detection is based on intersubband excitation of electrons in GaAs/AlGaAs quantum wells and the subsequent photocarrier transport resulting in photoconductivity.
KeywordsFocal Plane Array Intersubband Transition Infrared Photodetector Silicon Multiplexer Pixel Operability
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