Focal Plane Imaging Arrays Based on GaAs/AlGaAs Quantum Well Infrared Photodetectors

  • H. C. Liu
  • M. Buchanan
  • Jianmeng Li
  • Z. R. Wasilewski
  • P. H. Wilson
  • P. A. Marshall
  • R. A. Barber
  • P. Chow-Chong
  • J. W. Fraser
  • J. Stapledon

Abstract

We summarize our work on the development of focal plane imaging arrays based on GaAs/AlGaAs quantum well infrared photodetectors. The infrared of interest here is from 3 to 12 μm in wavelength, and detection is based on intersubband excitation of electrons in GaAs/AlGaAs quantum wells and the subsequent photocarrier transport resulting in photoconductivity.

Keywords

Dioxide GaAs 

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Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • H. C. Liu
    • 1
  • M. Buchanan
    • 1
  • Jianmeng Li
    • 1
  • Z. R. Wasilewski
    • 1
  • P. H. Wilson
    • 1
  • P. A. Marshall
    • 1
  • R. A. Barber
    • 1
  • P. Chow-Chong
    • 1
  • J. W. Fraser
    • 1
  • J. Stapledon
    • 1
  1. 1.Institute for Microstructural SciencesNational Research CouncilOttawaCanada

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