Performance of Germanium and III-V Avalanche Photodiodes in the Detection of Single-Photons in the Near-Infrared
Silicon Avalanche Photodiodes (APD’s), biased above the breakdown voltage to work in Geiger-mode, are excellent single-photon detectors in the 0. 5–1.1 µm wavelength range. They find applications in photon correlation spectroscopy, velocimetry, Optical Time-Domain Reflectometry, Laser Ranging. However, the need of fast and more sensitive photodetectors working beyond 1 µm are increasingly required in many fields of science and technology, not to mention all the applications related to optical communications, with careful testing of optical components and networks at 1.3 µm and 1. 55 µm. Cooled S 1 photocathode and silicon Single Photon Avalanche Diodes (silicon SPAD’s) detect single photons up to 1.3 µm, but with a residual quantum efficiency of 10-6. Therefore, we have investigated the single-photon counting performance of germanium and III-V APD’s.
KeywordsBreakdown Voltage Avalanche Photodiode Ultra Short Laser Pulse Sensitive Photodetector Silicon Avalanche Photodiode
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