Transport Properties of Si+ Irradiated YBa2Cu3Oy Thin Films
Hall coefficients, magnetic hysteretic loops, and electrical resistivities in magnetic fields for YBa2Cu3Oy (YBCO) films under irradiation with Si+ were systematically examined in various ranges of temperature to investigate effects of the pinning force and disorder on the transverse Hall voltage near Tc . The incident energy of Si ions was 3 MeV and the fluence φt varied from 1×10 to 1×1014 cm-2 . Under irradiation with Si+, the critical current density of irradiated YBCO films derived from M-H curves showed enhancement and the resistive transition in magnetic fields became narrower in Si+ -irradiated YBCO films. The temperature ranges in which negative Hall coefficients occurred became narrower for a Si+–irradiated YBCO film that showed a stronger pinning force in magnetic fields; hence the negative Hall coefficient is affected by the pinning ability of YBCO films. The results are discussed.
KeywordsMixed State Critical Current Density Hall Coefficient YBCO Film Resistive Transition
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