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Synthesis of TlBa2Ca2Cu3Ox Thick Layer on Metal Tapes Through the Diffusion Reaction

  • A. Kikuchi
  • K. Tachikawa
  • M. Ogasawara
  • T. Nakamura
Part of the Advances in Cryogenic Engineering book series (ACRE, volume 44)

Abstract

TI-based high-T c oxide layers have been synthesized through the reaction between a T1-free substrate and a coating layer containing TI. The T1F substitution for T12O3 in the coating layer promotes the formation of the T1-1223 phase, which significantly improves the I c -B performance at higher temperatures. The behavior of our F during the reaction and the mechanism of the enhancement of the synthesis of T1-1223 phase by the TIF substitution have been studied. Meanwhile, thick T1-1223 layers, a few hundred μm in thickness, have been formed on Ni tape with good bonding through the diffusion reaction. The same reaction condition can be applied for the synthesis of T1-1223 phase on Ni tape as that for the bulk specimen with almost no degradation in superconducting performance.

Keywords

Coating Layer Diffusion Layer Diffusion Reaction Bulk Specimen EPMA Analysis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1998

Authors and Affiliations

  • A. Kikuchi
    • 1
  • K. Tachikawa
    • 1
  • M. Ogasawara
    • 1
  • T. Nakamura
    • 1
  1. 1.Faculty of EngineeringTokai UniversityHiratsuka, KanagawaJapan

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