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Hot Phonons in Microstructures

  • P. Kocevar
Part of the NATO ASI Series book series (NSSB, volume 206)

Abstract

The transient as well as steady-state dynamics of highly energetic carriers in semiconductors is of great interest for both basic research and technological applications in electrical and electrooptical devices. In recent years hot-carrier spectroscopy in bulk and microstructured III-V compounds has given strong evidence for a substantial, nonequilibrium-LO-phonon induced reduction of the electronic energy transfer into the lattice. The present report gives a general introduction into the concept of “hot phonons”, discusses their possible consequences for the response of photo-and/or d.c.field-excited hot carriers in GaAs-based quantum-well and multiquantumwell structures, and summarizes the experimental and theoretical support for these expectations.

Keywords

Optical Phonon Momentum Relaxation Thermalization Rate Phonon Distribution Electronic Energy Transfer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • P. Kocevar
    • 1
  1. 1.Institut für Theoretische PhysikUniversität GrazGrazAustria

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