Monte-Carlo Simulation of Femtosecond Carrier Relaxation in Semiconductor Quantum Wells

  • Stephen M. Goodnick
Part of the NATO ASI Series book series (NSSB, volume 206)


Ultra-fast optical studies in bulk semiconductors and quantum well systems have provided a great deal of insight into the dynamics of nonequilibrium phenomena on the picosecond and subpicosecond time scale. Typically such experiments are variants of the pump and probe type in which a short pump pulse is used to generate a nonequilibrium electron-hole plasma in the solid, and time delayed probe pulses are used to characterize the decay back to equilibrium. Quantum well systems in particular have proved quite interesting due to the high quality of samples grown using epitaxial growth techniques and the effects of carrier confinement which enhance certain optical phenomena such as excitonic absorption (Chemla et al., 1988). Quantum well systems have now been extensively studied using time resolved photoluminescence, Raman, and absorption spectroscopy which have increased our understanding of the effects of nonequilibrium phonons, intercarrier scattering, intersubband scattering, and tunnelling phenomena in quasi-two-dimensional systems (see for example the review by Shah, 1986).


Energy Loss Rate Polar Optical Phonon Scattering Rate Lower Subband Nonequilibrium Phonon 
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  1. Adachi, S., “GaAs, AlAs, and Al,Ga1_,As: Material Parameters for use in Research and Device Applications,” J. Appl. Phys., vol. 58, pp. R1 - R29, 1985.ADSCrossRefGoogle Scholar
  2. Bacchelli, L. and Jacoboni, C., “Electron-Electron Interactions in Monte Carlo Transport Calculations,” Solid State Comm., vol. 10, pp. 71–74, 1971.Google Scholar
  3. Boardman, A.D., Fawcett, W., and Rees, H.D., “Monte Carlo Calculation of the Velocity-Field Relationship for Gallium Arsenide,” Solid State Comm., vol. 6, pp. 305–307, 1968.ADSCrossRefGoogle Scholar
  4. Brunetti, R., Jacoboni, C., Matulionis, A., and Dienys, V., “Effect of Interparticle Collisions on Energy Relaxation of Carriers in Semiconductors,” Physica, vol 134B, pp. 369–373, 1985.Google Scholar
  5. Chemla, D.S., Miller, D.A.B., and Schmitt-Rink, S., “Nonlinear Optical Properties of Semiconductor Quantum Wells,” in Optical Nonlinearities and Instabilities in Semiconductors, Academic Press, New York, pp. 83–120, 1988.CrossRefGoogle Scholar
  6. Educato, J.L., Leburton, J.P., Dailey, D., and Hess, K, K., “Intersubband Scattering in Modulation Doped Quantum Wells,” presented at the Conference on Quantum Wells and Superlattices, Salt Lake City, March 1989.Google Scholar
  7. Goodnick, S.M., and Lugli, P., “Influence of Electron-Hole Scattering on Subpicosecond Carrier Relaxation in Al Ga1_,As/GaAs Quantum Wells”, Phys. Rev. B, vol. 38, no. 14, pp. 10135–10138, 1988a.Google Scholar
  8. Goodnick, S.M. and Lugli, P., Effect of Electron-electron Scattering on Nonequilibrium Transport in Quantum-well Systems,“ Phys. Rev. B, vol. 37, no. 5, pp. 2578–2588,. 1988b.Google Scholar
  9. Jacoboni, C. and Reggiani, L., “The Monte Carlo Method for the Solution of Charge Transport in Semiconductors with Applications to Covalent Materials,” Rev. Mod. Phys., vol. 55, no. 3, pp. 645–705, 1983.ADSCrossRefGoogle Scholar
  10. Kalos, M.H. and Whitlock, P.A., Monte Carlo Methods, John Wiley & Sons, New York, 1986.MATHCrossRefGoogle Scholar
  11. Knox, W.H., Hirlimann, C., Miller, D.A.B., Shah, J., Chemla, D.S., and Shank, C.V., “Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum Wells,” Phys. Rev. Lett., vol. 56, no. 11, pp. 1191–1193, 1986.ADSCrossRefGoogle Scholar
  12. Knox, W.H., Chemla, D.S., and Livescu, G., “High Density Femtosecond Excitation of Nonthermal Carrier Distributions in Intrinsic and ModulationGoogle Scholar
  13. Doped GaAs Quantum Wells,“ Solid-State Electronics, vol. 31, no. 3/4, pp. 425–430, 1988.Google Scholar
  14. Lugli, P. and Goodnick, S.M., “Nonequilibrium Longitudinal-Optical Phonon Effects in GaAs-A1GaAs Quantum Wells,” Phys. Rev. Lett., vol. 59, no. 6, pp. 716–719, 1987.ADSCrossRefGoogle Scholar
  15. Lugli, P. and Ferry, D.K., “Investigation of Plasmon-Induced Losses in Quasi-Ballistic Transport,” IEEE Elec. D.v. Lett., vol. EDL-6, no. 1, pp. 25–27, 1985.ADSCrossRefGoogle Scholar
  16. Norris, T.B., Vodjdani, N., Vinter, B., Weisbuch, C., and Mourou, G.A., “Electron Tunneling Times in Coupled Quantum Wells,” to be published.Google Scholar
  17. Oberli, D.Y., Wake, D.R., Klein, M.V., Klem, J., Henderson, T., and Morkoc, H., “Time Resolved raman Scattering in GaAs Quantum Wells,” Phys. Rev. Lett., vol. 59, no. 6, pp. 696–699, 1987.ADSCrossRefGoogle Scholar
  18. Oberli, D.Y., Shah, J., Damen, T.C., Tu, C.W., Miller, D.A.B., “Electron Tunneling Times in Coupled Quantum Wells,” in Optical Society of America Technical Digest Series, vol. 10, pp. 272–275, 1989.Google Scholar
  19. Price, P., “Monte Carlo Calculation of Electron Transport in Solids,” in Semiconductor and Semimetals, R.K. Willardson and A.C. Beer, eds., Academic Press, New York, pp. 249–308, 1979.Google Scholar
  20. Riddoch, F.A., and Ridley, B.K., “On the Scattering of Electrons by Polar Optical Phonons in Quasi-2D Quantum Wells,” J. Phys. C, vol. 16, pp. 6971–6982, 1983ADSCrossRefGoogle Scholar
  21. Riddoch, F.A., and Ridley, B.K., “Electron Scattering Rates Associated with the Polar Optical Phonon Interaction in a Thin Ionic Slab,” Physica, vol. 134B, pp 342–346, 1985.Google Scholar
  22. Ryan, J.F., Taylor, R.A., Turberfield, A.J., Maciel, A., Worlock, J.M., Gossard, A.C., and Weigmann, W., “Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-A1GaAs Heterostructures,” Phys. Rev. Lett., vol. 53, no. 19, pp. 1841–1844, 1984.ADSCrossRefGoogle Scholar
  23. Seilmeier, A., Hübner, H.J., Abstreiter, G., Weimann, G., and Schlapp, W., “Intersubband Relaxation in GaAs-Al Ga1,xAs Quantum Well Structures Observed Directly by an Infrared Bleaching Technique,” Phys. Rev. Lett., vol. 59, no 12, pp. 1345–1349, 1987.ADSCrossRefGoogle Scholar
  24. Sielmeier, A. Hübner, H.J., Wörner, M., Abstreiter, G., Weimann, G., and Schlapp, W., “Direct Observation of Intersubband Relaxation in Narrow Multiple Quantum Well Structurds,” Sol. State Elec., vol. 31, no. 3, pp. 767–770, 1988.CrossRefGoogle Scholar
  25. Shah, J., Pinczuk, A., Gossard, A.C., and Wiegmann, W., “Energy-Loss Rates for Hot Electrons and Holes in GaAs Quantum Wells,” Phys. Rev. Lett., vol. 54, no. 18, pp. 2045–2048, 1985.ADSCrossRefGoogle Scholar
  26. Shah, J., “Hot Carriers in Quasi-2-D Polar Semiconductors,” IEEE Journal of Quantum Electronics, vol. QE-22, no. 4, pp. 1728–1743, 1986.ADSCrossRefGoogle Scholar
  27. Shah, J., private communication.Google Scholar
  28. Tolman, R.C., The Principles of Statistical Mechanics, Oxford University Press, London, 1938.Google Scholar
  29. Linde, D., Kuhl, J., and Klingenberg, H., Raman Scattering from Nonequilibrium LO Phonons with Picosecond Resolution,“ Phys. Rev, Lett., vol. 44, no. 23, pp. 1505–1508, 1980.ADSCrossRefGoogle Scholar
  30. Weisbuch, C., “Fundamental Properties of III—V Semiconductor Two—Dimensional Quantized Structures: The Basis for Optical and Electronic Device Applications,” in Semiconductors and Semiconductors, Vol. 24, R.K. Willardson and A.C. Beer, eds., Academic Press, New York, pp. 1–133, 1987.Google Scholar

Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • Stephen M. Goodnick
    • 1
  1. 1.Center for Advanced Materials ResearchOregon State UniversityCorvallisUSA

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