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Ultrafast Luminescence Studies of Tunneling in Semiconductor Microstructures

  • Jagdeep Shah
Part of the NATO ASI Series book series (NSSB, volume 206)

Abstract

Tunneling in semiconductor microstructures such as double barrier diodes and double quantum wells is of fundamental as well as practical interest and has received intense attention in recent years. These phenomena have been investigated primarily using electrical techniques such as current-voltage measurements. Ultrafast optical techniques provide a powerful means of investigating the dynamics of carrier transport and tunneling in semiconductor microstructures. We present a brief review of the basic concepts behind all-optical techniques and then discuss some recent results on the dynamics of tunneling using luminescence spectroscopy.

Keywords

Full Width Half Maximum Heavy Hole Resonant Tunneling Negative Differential Resistance Escape Rate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • Jagdeep Shah
    • 1
  1. 1.AT&T Bell LaboratoriesHolmdelUSA

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