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Cyclotron Resonance of 2D Electron Systems in Intentionally Doped AlGaAs/GaAs Quantum Wells and Heterostructures

  • H. Sigg
  • J. Richter
  • K. von Klitzing
  • K. Ploog
Part of the NATO ASI Series book series (NSSB, volume 206)

Abstract

An introduction is given to various aspects of the electron-impurity interaction that can be realized and studied in intentionally and selectively doped two-dimensional (2D) electron systems. We exemplify this by presenting transport and far infrared (FIR) measurements in differently doped A1GaAs/GaAs heterostructures and quantum well structures. The FIR response is studied for electrons bound to 2D confined impurities of donors in a quantum well. In the same system we have studied the transition from an insulator to metal behavior. We contrast the results on donor doped systems with our experiments on acceptor doped AlGaAs/GaAs heterostructures. The experimental findings for doping induced phenomena on the cyclotron resonance of 2D-electron systems lead us to discuss the validity of the single particle model of bound states.

Keywords

Cyclotron Resonance Magnetic Field Dependence Bulk GaAs Modulation Doping Single Particle Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • H. Sigg
    • 1
  • J. Richter
    • 1
  • K. von Klitzing
    • 1
  • K. Ploog
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Federal Republic of Germany

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