Magnetotunneling in Semiconductor Microstructures

  • C. Tejedor
  • L. Brey
  • G. Platero
  • P. A. Schulz
Part of the NATO ASI Series book series (NSSB, volume 206)


Tunneling is intrinsically a quantum mechanical effect which can be analyzed both by transport and spectroscopic experiments in potential barriers built up by means of semiconductor microstructures. The main effort has been devoted to the study of tunneling between two media separated by a region where localized states can exist. In this case, there are two aspects of extraordinary interest: i) the appearance of negative differential resistance (NDR) and ii) the existence of two possible mechanisms, coherent and sequential, as responsible for resonant tunneling. The study of those problems has become more accessible with the development of growth techniques of semiconductor microstructures allowing the design of the required potential profiles. As in the case of any other spectroscopy, much insight on the phenomenon can be attained by modulation with some external agents. In particular, since tunneling is deeply connected with spatial localization or delocalization of quantum states, a magnetic field can be very useful as a modulator of the spatial shape of the wavefunctions.


Transmission Probability Applied Bias Resonant Tunneling Double Barrier Bulk Fermi 
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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • C. Tejedor
    • 1
  • L. Brey
    • 1
  • G. Platero
    • 1
  • P. A. Schulz
    • 1
  1. 1.Departamento de Fisica de la Materia CondensadaUniversidad AutonomaCantoblancoSpain

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