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Abstract

The semiconductor switch, that has become called the insulated gate bipolar transistor (IGBT), has found a niche in applications of ac and dc motor drive control at power levels well in excess of 50 kW. This transistor literally combines the switching characteristics of the MOSFET with the power handling capabilities of the BJT. Designed in the 1980s, the IGBT has the gating properties of a power MOSFET, fast, voltage driven and low power dissipation. It has a small on-state voltage drop (2 to 3 volts) and low conduction losses, like a BJT. Further, in theory, it can block forward and reverse voltages of equal magnitude, like a thyristor. In practice the reverse voltage withstand is low.

Keywords

Gate Voltage Drift Region Insulate Gate Bipolar Tran Gate Circuit Trigger Angle 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© R.S. Ramshaw 1993

Authors and Affiliations

  • R. S. Ramshaw
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of WaterlooOntarioCanada

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