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Abstract

The Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) was originally a signal amplifier, but its characteristics were suitably developed in the early 1980s so that it could be added to the range of power switches. Whereas thyristors are suited to very high-power, low-frequency switching applications, the power MOSFET best fits low-power, high-frequency uses. It is the fastest power switch.

Keywords

Gate Voltage Drain Voltage Input Capacitance Power MOSFET Ohmic Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© R.S. Ramshaw 1993

Authors and Affiliations

  • R. S. Ramshaw
    • 1
  1. 1.Department of Electrical and Computer EngineeringUniversity of WaterlooOntarioCanada

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