Abstract
The Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) was originally a signal amplifier, but its characteristics were suitably developed in the early 1980s so that it could be added to the range of power switches. Whereas thyristors are suited to very high-power, low-frequency switching applications, the power MOSFET best fits low-power, high-frequency uses. It is the fastest power switch.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Bibliography
Baliga, B.J. Modern Power Devices. New York: John Wiley & Sons, 1987.
Baliga, B.J., and D.Y. Chen. Power Transistors: Device Design and Applications. New York: IEEE Press, 1984.
Blecher, A. Field Effect and Bipolar Power Transistor Physics. New York: Academic Press, 1981.
Oxner, E.S. Power FETs and Their Applications. Englewood Cliffs, N.J: Prentice-Hall, 1982.
Blicher, A. Field Effect and Bipolar Power Transistor Physics. New York: Academic Press, 1981.
Pierret, R.F. Field-effect Devices. Modular Series on Solid State Devices, Volume 4., Massachusetts: Addison-Wesley, 1983.
Grant, D.A. and J. Gowar. Power MOSFETs; Theory and Applications. New York: John Wiley & Sons, 1989.
Grant, D.A. and J. Gowar. MOSPOWER Applications Handbook. Siliconix Ltd, 1985.
Grant, D.A. and J. Gowar. Power MOSFET Designer’s Manual. 4th ed. International Rectifier Corp., 1987.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1993 R.S. Ramshaw
About this chapter
Cite this chapter
Ramshaw, R.S. (1993). The MOSFET. In: Power Electronics Semiconductor Switches. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6219-8_6
Download citation
DOI: https://doi.org/10.1007/978-1-4757-6219-8_6
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-412-28870-8
Online ISBN: 978-1-4757-6219-8
eBook Packages: Springer Book Archive