The bipolar junction transistor is known as a signal amplifier. In the context of power electronics we will discuss this semiconductor device as a power switch.
KeywordsBase Current Base Drive Delay Angle Emitter Terminal Hard Saturation
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Unable to display preview. Download preview PDF.
- Baliga, B.J. Modern Power Devices. New York: John Wiley & Sons, Inc., 1987.Google Scholar
- Baliga, B.J., and D. Chen. Power Transistors: Device Design and Applications. New York: IEEE Press, 1984.Google Scholar
- Blicher, A. Field Effect and Bipolar Power Transistor Physics. New York: Academic Press, 1981.Google Scholar
- Ghandi, S.K. Semiconductor Power Devices. New York: John Wiley & Sons, Inc., 1987.Google Scholar
- Grove, A.S. Physics and Technology of Semiconductor Devices. New York: John Wiley & Sons, Inc., 1967.Google Scholar
- Hower, P.L. Bipolar Transistors, Semiconductor Devices for Power Conditioning. New York: Plenum Press, 1982.Google Scholar
- Neudeck, G.W. The Bipolar Junction Transistor. Modular Series on Solid State Devices, Volume 3. Massachusetts: Addison-Wesley, 1983.Google Scholar
- Peter, J.M. (ED). The Power Transistor in its Environment. Thomson-CSF Sescosem Semiconductor Division, 1978.Google Scholar
- Peter, J.M. (ED). Silicon Power Transistor Handbook. Pittsburgh: Westinghouse Electric Corp., 1967.Google Scholar
- Sittig, R., and P. Roggwiller. (EDs). Semiconductor Devices for Power Conditioning. New York: Plenum Press, 1982.Google Scholar
- Smith, M.W. (ED). Electronic Data Library, Transistors-Diodes. General Electric Co., 1982.Google Scholar
- Sze, S.M. Physics of Semiconductor Devices. Second Edition. New York: John Wiley & Sons, Inc., 1981.Google Scholar
© R.S. Ramshaw 1993