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Low Power Sandwich/Spin Tunneling Memory Device

  • Jim Daughton
  • Arthur Pohm
  • Russell Beech
Part of the Series in Computer Science book series (SCS)

Abstract

ABSTRACT A new nonvolatile storage element has potential for greatly reducing power consumption when used in memory or as a reconfiguration element. The element uses magnetic material hysteresis to store data and tunneling magnetoresistance to read data. Advantages compared to other magnetic and semiconductor nonvolatile storage cells are cited. The design of the cell and some limited characterization data are presented along with conceptual circuit and memory architecture desings. Smaller, niche memory and reconfiguration circuits are the most probable power aware applications areas. Extension to very high density memories may be possible through using heat and magnetic field for writing data.

Keywords

Memory Cell Curie Point Magnetic Layer Dynamic Random Access Memory Memory Architecture 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2002

Authors and Affiliations

  • Jim Daughton
    • 1
  • Arthur Pohm
    • 1
  • Russell Beech
    • 1
  1. 1.NVE CorporationEden PrairieUSA

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