Abstract
In this research, we investigate wet-etching properties of GaAs in NH4OH-H2O2-H2O and develop a novel bulk micromachining process for fabricating released micro-structures using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and undercut rates of (001) GaAs are measured using various compositions of NH4OH-H2O2-H2O mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is developed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.
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© 2002 Springer Science+Business Media New York
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Dan Cho, Di. et al. (2002). A Novel Bulk Micromachining Method in Gallium Arsenide. In: Tay, F.E.H. (eds) Materials & Process Integration for MEMS. Microsystems, vol 9. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-5791-0_9
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DOI: https://doi.org/10.1007/978-1-4757-5791-0_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5303-2
Online ISBN: 978-1-4757-5791-0
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