Infrared Television Microscope for the Investigation of Recombination Radiation and the Optical Properties of Semiconductors

  • N. L. Artem’ev
  • V. S. Bagaev
  • O. V. Gogolin
  • Yu. A. Efimov
  • B. D. Kopylovskii
Part of the The Lebedev Physics Institute Series book series (LPIS, volume 42)

Abstract

In the present article we describe an infrared television microscope suitable for investigations of the recombination radiation and optical properties of semiconductors in the wavelength range from 0.5 to 2.3 μ.

Keywords

Recombination GaAs 

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Literature Cited

  1. 1.
    N. I. Murashov and G. D. Shnyrev, Photoelectric Infrared Polaroscopic and Flaw Detection Techniques in Semiconductor Materials, Collection edited by V. I. Grechushnikov, Izd. AN SSSR (1963), p. 40.Google Scholar
  2. 2.
    O. Deutschbein and M. Bernard, Solid State Physics, Semiconductors, 1: 117 (1960).Google Scholar

Copyright information

© Springer Science+Business Media New York 1970

Authors and Affiliations

  • N. L. Artem’ev
  • V. S. Bagaev
  • O. V. Gogolin
  • Yu. A. Efimov
  • B. D. Kopylovskii

There are no affiliations available

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