Measurements of basic nonlinearities of transistors

  • Piet Wambacq
  • Willy Sansen
Part of the The Kluwer International Series in Engineering and Computer Science book series (SECS, volume 451)


In the absence of reliable transistor models and/or an accurate parameter extraction, one could consider to measure nonlinearity coefficients. This chapter concentrates on how higher-order derivatives of the transistor current can be measured accurately. The measurement results could be used in device parameter extraction. Only measurements on a bipolar transistor are presented in this chapter. The principles can be applied to MOS transistors as well.


Collector Current Input Port Drain Current Measured Harmonic Bipolar Transistor 


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Copyright information

© Springer Science+Business Media New York 1998

Authors and Affiliations

  • Piet Wambacq
    • 1
  • Willy Sansen
    • 2
  1. 1.IMECLeuvenBelgium
  2. 2.Katholieke Universiteit LeuvenBelgium

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