Abstract
In this chapter the most important nonlinearities in a bipolar transistor are discussed. The transistor is assumed to work in the forward active region. The model that will be followed in this chapter is the Gummel-Poon model [Getr 76]. This model is used now already for several decades. More recent models such as the VBIC95 model [Mc And 95] are still based upon this model. The region of quasi-saturation [Anto 88] is not considered here. This region is especially of interest for power transistors. Distortion caused by quasi-saturation in power applications is discussed in [DeVr 96].
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1998 Springer Science+Business Media New York
About this chapter
Cite this chapter
Wambacq, P., Sansen, W. (1998). Silicon bipolar transistor models for distortion analysis. In: Distortion Analysis of Analog Integrated Circuits. The Kluwer International Series in Engineering and Computer Science, vol 451. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-5003-4_6
Download citation
DOI: https://doi.org/10.1007/978-1-4757-5003-4_6
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5044-4
Online ISBN: 978-1-4757-5003-4
eBook Packages: Springer Book Archive