Silicon bipolar transistor models for distortion analysis

  • Piet Wambacq
  • Willy Sansen
Part of the The Kluwer International Series in Engineering and Computer Science book series (SECS, volume 451)


In this chapter the most important nonlinearities in a bipolar transistor are discussed. The transistor is assumed to work in the forward active region. The model that will be followed in this chapter is the Gummel-Poon model [Getr 76]. This model is used now already for several decades. More recent models such as the VBIC95 model [Mc And 95] are still based upon this model. The region of quasi-saturation [Anto 88] is not considered here. This region is especially of interest for power transistors. Distortion caused by quasi-saturation in power applications is discussed in [DeVr 96].


Collector Current Power Model Nonlinearity Coefficient Bipolar Transistor Base Current 
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Copyright information

© Springer Science+Business Media New York 1998

Authors and Affiliations

  • Piet Wambacq
    • 1
  • Willy Sansen
    • 2
  1. 1.IMECLeuvenBelgium
  2. 2.Katholieke Universiteit LeuvenBelgium

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