Design of RF Power Amplifiers in CMOS Technology
This chapter examines challenges faced in the design of CMOS radio-frequency power amplifiers. The implementation of radio-frequency circuits in CMOS has been the focus of research in academia for the past decade because of the potential economic benefits it provides compared to more expensive alternative technologies currently used by the industry. An overview of GaAs MESFET and GaAs HBT processes is provided along with a description of CMOS technology. A comparison of CMOS and GaAs HBT technologies follows, highlighting the merits and challenges accompanying each technology. The last section of the chapter is devoted to reviewing characteristics of passive elements integrated in CMOS technologies, with an emphasis on properties of interest to power amplifier design.
KeywordsCMOS Technology Spiral Inductor Polysilicon Layer GaAs MESFET Series Loss
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