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Semiconductor Nanocrystals pp 152–208Cite as

Porous Silicon as an Open Dielectric Nanostructure: an Ensemble of Aspheric Silicon Nanocrystals

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Part of the book series: Nanostructure Science and Technology ((NST))

Abstract

Reducing the dimensions of semiconductor structures is nowadays a well established field in solid state physics, not at least on demand by the preceding miniaturization in microelectronics. To confine carriers in two dimensions was one of the first steps towards the current nano-science and technology. At present, three dimensional confinement of carriers in quantum dots or nanocrystals (NCs) with typical dimensions of the order of nanometers is a standard technique to modify the physical properties known from the bulk material. One of the most prominent consequences arising from the reduced dimensionality is an altered density of states which is accompanied by a widening of the bandgap with decreasing size due to quantum confinement. Therefore the optical properties, especially the photoluminescence (PL), of such objects differ significantly from that of the bulk material.

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  1. Physik-Department E16, Technische Universität München, D-85747, Garching, Germany

    J. Diener, N. Künzner, E. Gross, G. Polisski & D. Kovalev

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  1. J. Diener
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Editors and Affiliations

  1. Naval Research Laboratory, Washington, D.C., USA

    Alexander L. Efros

  2. Natural Research Council of Canada, Ottawa, Ontario, Canada

    David J. Lockwood

  3. New Jersey Institute of Technology, Newark, New Jersey, USA

    Leonid Tsybeskov

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Diener, J., Künzner, N., Gross, E., Polisski, G., Kovalev, D. (2003). Porous Silicon as an Open Dielectric Nanostructure: an Ensemble of Aspheric Silicon Nanocrystals. In: Efros, A.L., Lockwood, D.J., Tsybeskov, L. (eds) Semiconductor Nanocrystals. Nanostructure Science and Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3677-9_5

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