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Auger Processes in Nanosize Semiconductor Crystals

  • Alexander Efros
Part of the Nanostructure Science and Technology book series (NST)

Abstract

In this chapter I discuss the role that various types of Auger processes play in the linear and nonlinear optical properties of semiconductor nanocrystals (NCs). The nanocrystal form of semiconductors was discovered by Ekimov [1], Hengeline [2], and Brus [3] independently in semiconductor doped glasses and colloidal solutions almost 20 years ago. However, rapid progress in semiconductor nanocrystal research, both in chemical synthesis and in physical understanding has been made only in the last ten years. A wide class of semiconductor materials can now be prepared in nanocrystal form including: covalent Si and Ge, III-V compounds (GaAs, GaP, InP), II-VI compounds (CdSe, CdS, ZnSe, CdTe, PbS and their alloys), and I-VII compounds (CuCl, CuBr, AgBr) (see for review Ref.[4]). Furthermore, in many cases, technology allows one to control the size (from 2 to 30 nm), shapes and surface of these nano-size semiconductor crystals (for an example, see the excellent reviews by Brus [5] and Alivisatos [6]). Realistic calculations of the nanocrystal properties allow us to make a serious analysis of experimental data (for example, see Ref.7). This together with progress in chemical synthesis has brought us to the stage of making different applications of NCs.

Keywords

Auger Process Random Telegraph Signal Phonon Bottleneck Auger Ionization Semiconductor Dope Glass 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2003

Authors and Affiliations

  • Alexander Efros
    • 1
  1. 1.Nanostructure Optics SectionNaval Research LaboratoryUSA

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