Thermal transfer and thermal coupling in IC’s

  • Josep Altet
  • Antonio Rubio


Prior to the 19th century, heat was envisioned as a liquid that flowed from hotter to colder objects. This imagined substanceless and weightless fluid was called caloric and no distinction was made between heat and temperature until the writings of Joseph Black (1728–1799).


Heat Transfer Thermal Resistance Natural Convection Contact Resistance Force Convection 


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  1. [64]
    Rohsenow, W, Hartnett, J.P. and Cho, Y.I., “Handbook of Heat Transfer”, mcGraw-Hill Handbooks,1998.Google Scholar
  2. [65]
    Antonetti, V.W. and Yoyanovich, M.M., “Enhancement of thermal contact conductances by metallic coating: theory and experiments”, Journal of Heat Transfer (107): 513519, 1985.Google Scholar
  3. [66]
    Bush, A.W. et al., “The elastic contact of a rough surface”, Wear, vol. 35, pp. 87–111, 1975.CrossRefGoogle Scholar
  4. [67]
    Mikic, B.B. and Rohsenow, Thermal contact resistance, Mechanical Eng. Report No. DSR 74542–41, MIT, Cambridge, 1966.Google Scholar
  5. [68]
    Al-Arabi, M. and El-Riedy, M.K., “Natural convection heat transfer from isothermal horizontal plates of different shapes”, Int. J. Heat Mass Transfer (19): 1399–1404, 1976.Google Scholar
  6. [69]
    Shah, R.K. et al., “Laminar flow forced convection in ducts”, Supplement 1 to Advances in Heat Transfer, eds. T.F. Irvine and J.P. Hartnett, Academic Press, New York, 1978.Google Scholar
  7. [70]
    Siegel, R. and Howell, J.R., Thermal Radiation Heat Transfer, 3rd ed., Hemisphere/Taylor and Francis, Washington, D.C. 1992.Google Scholar
  8. [71]
    Brewster, M.Q., Thermal radiative transfer and properties, John Wiley and Sons, New York, 1992.Google Scholar
  9. [72]
    Modest, M.M., Radiative heat transfer, McGraw-Hill, New York, 1993.Google Scholar
  10. [73]
    Perry, T.S. “For the record: Kilby and the IC”, IEEE Spectrum,Volume: 25 Issue: 12, Dec. 1988, Page(s): 40–41.Google Scholar
  11. [74]
    Borkar, S. “Obeying Mooré s law beyond 0.18 micron” ASIC/SOC Conference, 2000, Proceedings. 13th Annual IEEE International, 2000 Page(s): 26–31.Google Scholar
  12. [75]
    Bakoglu, H.B., Circuits, interconnections and packaging for VLSI, Addison-Wesley, 1990.Google Scholar
  13. [76]
    Andrews, J.A. et al., “Thermal characteristics of 16 and 40-pin plastic DIP’s”, IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. CHMT-4, no. 4, 1981, pp. 455–461.CrossRefGoogle Scholar
  14. [77]
    Mahalingam, M., “Thermal management on semiconductor device packaging”, Proceedings IEEE, vol. 73, no. 9, 1985, pp. 1396–1404.CrossRefGoogle Scholar
  15. [78]
    Mahalingam, M., “Thermal studies on Pin Grid Array Packages for High Density LSI and VLSI logic circuits”, IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. CHMT-6, no. 3, 1983, pp. 246–256.CrossRefGoogle Scholar
  16. [79]
    Krueger, W. and Bar-Cohen, A., “Thermal characterization on a PLCC- expanded Rjc methodology”, IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. 15, no. 5, 1992, pp. 691–698.MathSciNetCrossRefGoogle Scholar
  17. [80]
    Tsividis, Yannis P., “Operation and modelling of the MOS transistor”, McGraw Hill, 1989.Google Scholar
  18. [81]
    Klaasen, F.M., “MOS devices modelling” in Design of VLSI Circuits for Telecommunications, Y. Tsividis and P. Antognetti (editors), Prentice Hall 1985.Google Scholar
  19. [82]
    Klaasen, F.M. and Hes, W., “On the temperature coefficient of the MOSFET threshold voltage”, Solid State Electronics, vol. 29, pp. 787–789, 1986.CrossRefGoogle Scholar
  20. [83]
    Shockley, W., “The theory of p-n junctions in semiconductors and p-n transistors” Bell System Tech. J., 28, pp. 435–489, July 1949.Google Scholar
  21. [84]
    Gray, P.E. et al., “Physical electronics and circuit models of transistors”, John Wiley 1970.Google Scholar
  22. [85]
    Ebers, J.J. and Moll, J.L., “Large-signal behaviour of junction transistors”, Proc. IRE, 42, pp. 1761–1772, December 1954.CrossRefGoogle Scholar
  23. [86]
    Gray, P.E. et al., Physical electronics and circuit models for transistors, John Wiley and Sons, 1970.Google Scholar
  24. [87]
    Eiksson, P. et al., “Design of accelerated corrosion tests for electronic components in automotive applications”, IEEE Transactions on Components, Hybrids and Manufacturing Technology, Part A, vol. 24 no. 1, March 2001, pp. 99–107.Google Scholar
  25. [88]
    Hess, K. et al., “The physics of determining chip reliability”, IEEE Circuits and Systems, May 2001, pp. 33–39.Google Scholar
  26. [89]
    Mizubayashi, W. et al., “Statistical analysis of soft breakdown in ultrathin gate oxides”, Symposium on VLSI technology, 2001, pp. 95–96.Google Scholar
  27. [90]
    Parikh, S. et al., “Defect and electromigration characterization of a two level copper interconnect”, Interconnect Technology Conference, 2001, pp. 183–185.Google Scholar
  28. [91]
    Blake, J.R., “Electromigration failure modes in aluminium metallization for semiconductor devices”, Proc. IEEE, vol. 57, p. 1587, 1969.CrossRefGoogle Scholar
  29. [92]
    Manca, J.V. et al., “The Arrhenius relation for electronics in extreme temperature conditions”, Third Conference on High Temperature Electronics, 1999, pp. 29–32.Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • Josep Altet
    • 1
  • Antonio Rubio
    • 1
  1. 1.University Politècnia de CatalunyaSpain

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