Simulation of Electron Transport in Semiconductor Microstructures: Field Emission from Nanotip

  • V. A. Fedirko
  • Yu. N. Karamzin
  • S. V. Polyakov


Semiconductor submicron structures and nanostructures are now the basis of modern solid state electronics. Numerical simulation of their static and dynamic characteristic is an actual practical problem and adequate mathematical modeling of electron transport in these structures based on clear understanding of its fundamental physical peculiarities is vital for successful development of submicron devices.


Electron Temperature Impact Ionization Electron Heating Surface Electric Field Submicron Device 
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Copyright information

© Springer Science+Business Media New York 2001

Authors and Affiliations

  • V. A. Fedirko
    • 1
  • Yu. N. Karamzin
  • S. V. Polyakov
    • 2
  1. 1.Moscow State University of Technology “STANKIN”MoscowRussia
  2. 2.Institute for Mathematical Modelling of RASMoscowRussia

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