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SPL Linewidth Control

  • Hyongsok T. Soh
  • Kathryn Wilder Guarini
  • Calvin F. Quate
Part of the Microsystems book series (MICT, volume 7)

Abstract

The current-controlled scanning probe lithography (SPL) systems that we developed (described in Chapter 3) can reliably pattern uniform features in organic resists with dimensions below 100 nm. In this chapter, we compare electron exposures made by SPL to those made by electron beam lithography (EBL). This comparison highlights the advantages and limitations of a low-energy electron lithography technique such as SPL.

Keywords

Line Width Proximity Effect Electron Beam Lithography Energy Density Distribution Pixel Width 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2001

Authors and Affiliations

  • Hyongsok T. Soh
    • 1
  • Kathryn Wilder Guarini
    • 1
  • Calvin F. Quate
    • 1
  1. 1.Stanford UniversityStanfordUSA

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