• Francis Balestra
  • Gérard Ghibaudo


The SOI CMOS is shown in Fig. 1. A buried insulator, which is typically an oxide layer, is fabricated in the silicon substrate using various methods (see next paragraph).


Threshold Voltage Gate Oxide Subthreshold Swing Double Gate Drain Bias 


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Copyright information

© Springer Science+Business Media Dordrecht 2001

Authors and Affiliations

  • Francis Balestra
    • 1
  • Gérard Ghibaudo
    • 1
  1. 1.Laboratoire de Physique des Composants à SemiconducteursUMR CNRS, ENSERG/INPGGrenobleFrance

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